Vertical n-type organic transistors with tri(8-hydroxyquinoline) aluminum as collector and fullerene as emitter

Mingdong Yi; Xianhai Xia; Tao Yang; Yuyu Liu; Linghai Xie; Xinhui Zhou; Wei Huang

doi:10.1063/1.3556595

Vertical n-type organic transistors with tri(8-hydroxyquinoline) aluminum as collector and fullerene as emitter

Mingdong Yi, Xianhai Xia, Tao Yang, Yuyu Liu, Linghai Xie, Xinhui Zhou, Wei Huang

Nanjing University of Posts and Telecommunications

科研成果: 期刊稿件 › 文章 › 同行评审

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摘要

A vertical n-type permeable organic metal-base transistor was demonstrated. In this transistor, two kinds of n-type organic semiconductors of fullerene (C₆₀) and tri(8-hydroxyquinoline) aluminum (Alq₃) were used as emitter and collector, respectively, and the metal base was comprised of Al/Al₂O₃/LiF. The formation of a thin oxide film (Al ₂O₃) on the metal aluminum (Al) surface by thermally annealing makes the base self-selected charge carrier characteristic. As a result, the device exhibits low leakage current, and the common-base and common-emitter current gains reach near 1 and 30 at less than 1 V bias, respectively.

源语言	英语
文章编号	073309
期刊	Applied Physics Letters
卷	98
期	7
DOI	https://doi.org/10.1063/1.3556595
出版状态	已出版 - 14 2月 2011
已对外发布	是

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@article{92a239d2acaf486fa0bc7489b62c923f,

title = "Vertical n-type organic transistors with tri(8-hydroxyquinoline) aluminum as collector and fullerene as emitter",

abstract = "A vertical n-type permeable organic metal-base transistor was demonstrated. In this transistor, two kinds of n-type organic semiconductors of fullerene (C60) and tri(8-hydroxyquinoline) aluminum (Alq3) were used as emitter and collector, respectively, and the metal base was comprised of Al/Al2O3/LiF. The formation of a thin oxide film (Al 2O3) on the metal aluminum (Al) surface by thermally annealing makes the base self-selected charge carrier characteristic. As a result, the device exhibits low leakage current, and the common-base and common-emitter current gains reach near 1 and 30 at less than 1 V bias, respectively.",

author = "Mingdong Yi and Xianhai Xia and Tao Yang and Yuyu Liu and Linghai Xie and Xinhui Zhou and Wei Huang",

year = "2011",

month = feb,

day = "14",

doi = "10.1063/1.3556595",

language = "英语",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Vertical n-type organic transistors with tri(8-hydroxyquinoline) aluminum as collector and fullerene as emitter

AU - Yi, Mingdong

AU - Xia, Xianhai

AU - Yang, Tao

AU - Liu, Yuyu

AU - Xie, Linghai

AU - Zhou, Xinhui

AU - Huang, Wei

PY - 2011/2/14

Y1 - 2011/2/14

N2 - A vertical n-type permeable organic metal-base transistor was demonstrated. In this transistor, two kinds of n-type organic semiconductors of fullerene (C60) and tri(8-hydroxyquinoline) aluminum (Alq3) were used as emitter and collector, respectively, and the metal base was comprised of Al/Al2O3/LiF. The formation of a thin oxide film (Al 2O3) on the metal aluminum (Al) surface by thermally annealing makes the base self-selected charge carrier characteristic. As a result, the device exhibits low leakage current, and the common-base and common-emitter current gains reach near 1 and 30 at less than 1 V bias, respectively.

AB - A vertical n-type permeable organic metal-base transistor was demonstrated. In this transistor, two kinds of n-type organic semiconductors of fullerene (C60) and tri(8-hydroxyquinoline) aluminum (Alq3) were used as emitter and collector, respectively, and the metal base was comprised of Al/Al2O3/LiF. The formation of a thin oxide film (Al 2O3) on the metal aluminum (Al) surface by thermally annealing makes the base self-selected charge carrier characteristic. As a result, the device exhibits low leakage current, and the common-base and common-emitter current gains reach near 1 and 30 at less than 1 V bias, respectively.

UR - http://www.scopus.com/inward/record.url?scp=79951889946&partnerID=8YFLogxK

U2 - 10.1063/1.3556595

DO - 10.1063/1.3556595

M3 - 文章

AN - SCOPUS:79951889946

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 073309

ER -

Vertical n-type organic transistors with tri(8-hydroxyquinoline) aluminum as collector and fullerene as emitter

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