Vertical n-type organic transistors with tri(8-hydroxyquinoline) aluminum as collector and fullerene as emitter

Mingdong Yi; Xianhai Xia; Tao Yang; Yuyu Liu; Linghai Xie; Xinhui Zhou; Wei Huang

doi:10.1063/1.3556595

Vertical n-type organic transistors with tri(8-hydroxyquinoline) aluminum as collector and fullerene as emitter

Mingdong Yi, Xianhai Xia, Tao Yang, Yuyu Liu, Linghai Xie, Xinhui Zhou, Wei Huang

Nanjing University of Posts and Telecommunications

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A vertical n-type permeable organic metal-base transistor was demonstrated. In this transistor, two kinds of n-type organic semiconductors of fullerene (C₆₀) and tri(8-hydroxyquinoline) aluminum (Alq₃) were used as emitter and collector, respectively, and the metal base was comprised of Al/Al₂O₃/LiF. The formation of a thin oxide film (Al ₂O₃) on the metal aluminum (Al) surface by thermally annealing makes the base self-selected charge carrier characteristic. As a result, the device exhibits low leakage current, and the common-base and common-emitter current gains reach near 1 and 30 at less than 1 V bias, respectively.

Original language	English
Article number	073309
Journal	Applied Physics Letters
Volume	98
Issue number	7
DOIs	https://doi.org/10.1063/1.3556595
State	Published - 14 Feb 2011
Externally published	Yes

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title = "Vertical n-type organic transistors with tri(8-hydroxyquinoline) aluminum as collector and fullerene as emitter",

abstract = "A vertical n-type permeable organic metal-base transistor was demonstrated. In this transistor, two kinds of n-type organic semiconductors of fullerene (C60) and tri(8-hydroxyquinoline) aluminum (Alq3) were used as emitter and collector, respectively, and the metal base was comprised of Al/Al2O3/LiF. The formation of a thin oxide film (Al 2O3) on the metal aluminum (Al) surface by thermally annealing makes the base self-selected charge carrier characteristic. As a result, the device exhibits low leakage current, and the common-base and common-emitter current gains reach near 1 and 30 at less than 1 V bias, respectively.",

author = "Mingdong Yi and Xianhai Xia and Tao Yang and Yuyu Liu and Linghai Xie and Xinhui Zhou and Wei Huang",

year = "2011",

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T1 - Vertical n-type organic transistors with tri(8-hydroxyquinoline) aluminum as collector and fullerene as emitter

AU - Yi, Mingdong

AU - Xia, Xianhai

AU - Yang, Tao

AU - Liu, Yuyu

AU - Xie, Linghai

AU - Zhou, Xinhui

AU - Huang, Wei

PY - 2011/2/14

Y1 - 2011/2/14

N2 - A vertical n-type permeable organic metal-base transistor was demonstrated. In this transistor, two kinds of n-type organic semiconductors of fullerene (C60) and tri(8-hydroxyquinoline) aluminum (Alq3) were used as emitter and collector, respectively, and the metal base was comprised of Al/Al2O3/LiF. The formation of a thin oxide film (Al 2O3) on the metal aluminum (Al) surface by thermally annealing makes the base self-selected charge carrier characteristic. As a result, the device exhibits low leakage current, and the common-base and common-emitter current gains reach near 1 and 30 at less than 1 V bias, respectively.

AB - A vertical n-type permeable organic metal-base transistor was demonstrated. In this transistor, two kinds of n-type organic semiconductors of fullerene (C60) and tri(8-hydroxyquinoline) aluminum (Alq3) were used as emitter and collector, respectively, and the metal base was comprised of Al/Al2O3/LiF. The formation of a thin oxide film (Al 2O3) on the metal aluminum (Al) surface by thermally annealing makes the base self-selected charge carrier characteristic. As a result, the device exhibits low leakage current, and the common-base and common-emitter current gains reach near 1 and 30 at less than 1 V bias, respectively.

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U2 - 10.1063/1.3556595

DO - 10.1063/1.3556595

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SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

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ER -

Vertical n-type organic transistors with tri(8-hydroxyquinoline) aluminum as collector and fullerene as emitter

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