Two-Dimensional Electron Gases at LaAlO3/SrTiO3 Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics

Hong Yan; Zhaoting Zhang; Cong Bi; Shuanhu Wang; Ming Li; Lixia Ren; Changle Chen; Kexin Jin

doi:10.1021/acsanm.9b01701

Two-Dimensional Electron Gases at LaAlO₃/SrTiO₃ Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics

Hong Yan, Zhaoting Zhang, Cong Bi, Shuanhu Wang, Ming Li, Lixia Ren, Changle Chen, Kexin Jin

物理科学与技术学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

We investigate the transport and photoresponsive properties at nanostructured LaAlO₃/SrTiO₃ interfaces by a (La_0.3Sr_0.7)(Al_0.65Ta_0.35)O₃ buffering layer which produces a gradient strain. It is interesting that the buffering layer increases the critical thickness and enhances the carrier mobility for metallic samples. Moreover, these samples show a strong dependence of photoresponse on the thicknesses of LaAlO₃ films. In particular, an irreversible photoinduced insulator-to-metal transition is achieved at LaAlO₃ (1.6 nm)/(La_0.3Sr_0.7)(Al_0.65Ta_0.35)O₃ (0.4 nm)/SrTiO₃ interfaces. Our results provide an effective approach to modulate the transport and photoresponsive properties and are also of great significance for designing optoelectronic devices based on oxide electronics.

源语言	英语
页（从-至）	7197-7203
页数	7
期刊	ACS Applied Nano Materials
卷	2
期	11
DOI	https://doi.org/10.1021/acsanm.9b01701
出版状态	已出版 - 22 11月 2019

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10.1021/acsanm.9b01701

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title = "Two-Dimensional Electron Gases at LaAlO3/SrTiO3 Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics",

abstract = "We investigate the transport and photoresponsive properties at nanostructured LaAlO3/SrTiO3 interfaces by a (La0.3Sr0.7)(Al0.65Ta0.35)O3 buffering layer which produces a gradient strain. It is interesting that the buffering layer increases the critical thickness and enhances the carrier mobility for metallic samples. Moreover, these samples show a strong dependence of photoresponse on the thicknesses of LaAlO3 films. In particular, an irreversible photoinduced insulator-to-metal transition is achieved at LaAlO3 (1.6 nm)/(La0.3Sr0.7)(Al0.65Ta0.35)O3 (0.4 nm)/SrTiO3 interfaces. Our results provide an effective approach to modulate the transport and photoresponsive properties and are also of great significance for designing optoelectronic devices based on oxide electronics.",

keywords = "complex oxide heterointerfaces, interface engineering, nanostructured heterointerfaces, photoresponse, two-dimensional electron gas",

author = "Hong Yan and Zhaoting Zhang and Cong Bi and Shuanhu Wang and Ming Li and Lixia Ren and Changle Chen and Kexin Jin",

note = "Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

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T1 - Two-Dimensional Electron Gases at LaAlO3/SrTiO3 Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics

AU - Yan, Hong

AU - Zhang, Zhaoting

AU - Bi, Cong

AU - Wang, Shuanhu

AU - Li, Ming

AU - Ren, Lixia

AU - Chen, Changle

AU - Jin, Kexin

PY - 2019/11/22

Y1 - 2019/11/22

N2 - We investigate the transport and photoresponsive properties at nanostructured LaAlO3/SrTiO3 interfaces by a (La0.3Sr0.7)(Al0.65Ta0.35)O3 buffering layer which produces a gradient strain. It is interesting that the buffering layer increases the critical thickness and enhances the carrier mobility for metallic samples. Moreover, these samples show a strong dependence of photoresponse on the thicknesses of LaAlO3 films. In particular, an irreversible photoinduced insulator-to-metal transition is achieved at LaAlO3 (1.6 nm)/(La0.3Sr0.7)(Al0.65Ta0.35)O3 (0.4 nm)/SrTiO3 interfaces. Our results provide an effective approach to modulate the transport and photoresponsive properties and are also of great significance for designing optoelectronic devices based on oxide electronics.

AB - We investigate the transport and photoresponsive properties at nanostructured LaAlO3/SrTiO3 interfaces by a (La0.3Sr0.7)(Al0.65Ta0.35)O3 buffering layer which produces a gradient strain. It is interesting that the buffering layer increases the critical thickness and enhances the carrier mobility for metallic samples. Moreover, these samples show a strong dependence of photoresponse on the thicknesses of LaAlO3 films. In particular, an irreversible photoinduced insulator-to-metal transition is achieved at LaAlO3 (1.6 nm)/(La0.3Sr0.7)(Al0.65Ta0.35)O3 (0.4 nm)/SrTiO3 interfaces. Our results provide an effective approach to modulate the transport and photoresponsive properties and are also of great significance for designing optoelectronic devices based on oxide electronics.

KW - complex oxide heterointerfaces

KW - interface engineering

KW - nanostructured heterointerfaces

KW - photoresponse

KW - two-dimensional electron gas

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U2 - 10.1021/acsanm.9b01701

DO - 10.1021/acsanm.9b01701

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SN - 2574-0970

VL - 2

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JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

IS - 11

ER -

Two-Dimensional Electron Gases at LaAlO3/SrTiO3 Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics

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Two-Dimensional Electron Gases at LaAlO₃/SrTiO₃ Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics