Two-Dimensional Electron Gases at LaAlO3/SrTiO3 Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics

Hong Yan; Zhaoting Zhang; Cong Bi; Shuanhu Wang; Ming Li; Lixia Ren; Changle Chen; Kexin Jin

doi:10.1021/acsanm.9b01701

Two-Dimensional Electron Gases at LaAlO₃/SrTiO₃ Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics

Hong Yan, Zhaoting Zhang, Cong Bi, Shuanhu Wang, Ming Li, Lixia Ren, Changle Chen, Kexin Jin

School of Physical Science and Technology

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We investigate the transport and photoresponsive properties at nanostructured LaAlO₃/SrTiO₃ interfaces by a (La_0.3Sr_0.7)(Al_0.65Ta_0.35)O₃ buffering layer which produces a gradient strain. It is interesting that the buffering layer increases the critical thickness and enhances the carrier mobility for metallic samples. Moreover, these samples show a strong dependence of photoresponse on the thicknesses of LaAlO₃ films. In particular, an irreversible photoinduced insulator-to-metal transition is achieved at LaAlO₃ (1.6 nm)/(La_0.3Sr_0.7)(Al_0.65Ta_0.35)O₃ (0.4 nm)/SrTiO₃ interfaces. Our results provide an effective approach to modulate the transport and photoresponsive properties and are also of great significance for designing optoelectronic devices based on oxide electronics.

Original language	English
Pages (from-to)	7197-7203
Number of pages	7
Journal	ACS Applied Nano Materials
Volume	2
Issue number	11
DOIs	https://doi.org/10.1021/acsanm.9b01701
State	Published - 22 Nov 2019

Keywords

complex oxide heterointerfaces
interface engineering
nanostructured heterointerfaces
photoresponse
two-dimensional electron gas

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title = "Two-Dimensional Electron Gases at LaAlO3/SrTiO3 Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics",

abstract = "We investigate the transport and photoresponsive properties at nanostructured LaAlO3/SrTiO3 interfaces by a (La0.3Sr0.7)(Al0.65Ta0.35)O3 buffering layer which produces a gradient strain. It is interesting that the buffering layer increases the critical thickness and enhances the carrier mobility for metallic samples. Moreover, these samples show a strong dependence of photoresponse on the thicknesses of LaAlO3 films. In particular, an irreversible photoinduced insulator-to-metal transition is achieved at LaAlO3 (1.6 nm)/(La0.3Sr0.7)(Al0.65Ta0.35)O3 (0.4 nm)/SrTiO3 interfaces. Our results provide an effective approach to modulate the transport and photoresponsive properties and are also of great significance for designing optoelectronic devices based on oxide electronics.",

keywords = "complex oxide heterointerfaces, interface engineering, nanostructured heterointerfaces, photoresponse, two-dimensional electron gas",

author = "Hong Yan and Zhaoting Zhang and Cong Bi and Shuanhu Wang and Ming Li and Lixia Ren and Changle Chen and Kexin Jin",

note = "Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

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doi = "10.1021/acsanm.9b01701",

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T1 - Two-Dimensional Electron Gases at LaAlO3/SrTiO3 Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics

AU - Yan, Hong

AU - Zhang, Zhaoting

AU - Bi, Cong

AU - Wang, Shuanhu

AU - Li, Ming

AU - Ren, Lixia

AU - Chen, Changle

AU - Jin, Kexin

PY - 2019/11/22

Y1 - 2019/11/22

N2 - We investigate the transport and photoresponsive properties at nanostructured LaAlO3/SrTiO3 interfaces by a (La0.3Sr0.7)(Al0.65Ta0.35)O3 buffering layer which produces a gradient strain. It is interesting that the buffering layer increases the critical thickness and enhances the carrier mobility for metallic samples. Moreover, these samples show a strong dependence of photoresponse on the thicknesses of LaAlO3 films. In particular, an irreversible photoinduced insulator-to-metal transition is achieved at LaAlO3 (1.6 nm)/(La0.3Sr0.7)(Al0.65Ta0.35)O3 (0.4 nm)/SrTiO3 interfaces. Our results provide an effective approach to modulate the transport and photoresponsive properties and are also of great significance for designing optoelectronic devices based on oxide electronics.

AB - We investigate the transport and photoresponsive properties at nanostructured LaAlO3/SrTiO3 interfaces by a (La0.3Sr0.7)(Al0.65Ta0.35)O3 buffering layer which produces a gradient strain. It is interesting that the buffering layer increases the critical thickness and enhances the carrier mobility for metallic samples. Moreover, these samples show a strong dependence of photoresponse on the thicknesses of LaAlO3 films. In particular, an irreversible photoinduced insulator-to-metal transition is achieved at LaAlO3 (1.6 nm)/(La0.3Sr0.7)(Al0.65Ta0.35)O3 (0.4 nm)/SrTiO3 interfaces. Our results provide an effective approach to modulate the transport and photoresponsive properties and are also of great significance for designing optoelectronic devices based on oxide electronics.

KW - complex oxide heterointerfaces

KW - interface engineering

KW - nanostructured heterointerfaces

KW - photoresponse

KW - two-dimensional electron gas

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U2 - 10.1021/acsanm.9b01701

DO - 10.1021/acsanm.9b01701

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SN - 2574-0970

VL - 2

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JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

IS - 11

ER -

Two-Dimensional Electron Gases at LaAlO₃/SrTiO₃ Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics

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Keywords

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