The interface reaction and schottky barrier between metals and CdZnTe

Gangqiang Zha; Wanqi Jie; Tingting Tan; Wenhua Zhang; Faqiang Xu

doi:10.1021/jp0734070

The interface reaction and schottky barrier between metals and CdZnTe

Gangqiang Zha, Wanqi Jie, Tingting Tan, Wenhua Zhang, Faqiang Xu

材料学院

科研成果: 期刊稿件 › 文章 › 同行评审

22 引用（Scopus）

摘要

The Schottky barrier heights of Au and Ag contacts on the clean CdZnTe surfaces were measured by synchrotron radiation photoemission spectroscopy (SRPES). Meanwhile, the interface reactions between metals and CdZnTe were determined. The interface reaction was found to be a critical factor determining the barrier heights between metals and CdZnTe. Ohmic contact was obtained by electroless deposition of AuCl₃ solution, and the interface chemical reaction and interface layer were analyzed. The CdTeO₃ interface induced ohmic contact model is proposed to explain the electrical properties of electroless Au contacts with different treatments.

源语言	英语
页（从-至）	12834-12838
页数	5
期刊	Journal of Physical Chemistry C
卷	111
期	34
DOI	https://doi.org/10.1021/jp0734070
出版状态	已出版 - 30 8月 2007

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AU - Zha, Gangqiang

AU - Jie, Wanqi

AU - Tan, Tingting

AU - Zhang, Wenhua

AU - Xu, Faqiang

PY - 2007/8/30

Y1 - 2007/8/30

N2 - The Schottky barrier heights of Au and Ag contacts on the clean CdZnTe surfaces were measured by synchrotron radiation photoemission spectroscopy (SRPES). Meanwhile, the interface reactions between metals and CdZnTe were determined. The interface reaction was found to be a critical factor determining the barrier heights between metals and CdZnTe. Ohmic contact was obtained by electroless deposition of AuCl3 solution, and the interface chemical reaction and interface layer were analyzed. The CdTeO3 interface induced ohmic contact model is proposed to explain the electrical properties of electroless Au contacts with different treatments.

AB - The Schottky barrier heights of Au and Ag contacts on the clean CdZnTe surfaces were measured by synchrotron radiation photoemission spectroscopy (SRPES). Meanwhile, the interface reactions between metals and CdZnTe were determined. The interface reaction was found to be a critical factor determining the barrier heights between metals and CdZnTe. Ohmic contact was obtained by electroless deposition of AuCl3 solution, and the interface chemical reaction and interface layer were analyzed. The CdTeO3 interface induced ohmic contact model is proposed to explain the electrical properties of electroless Au contacts with different treatments.

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The interface reaction and schottky barrier between metals and CdZnTe

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