The interface reaction and schottky barrier between metals and CdZnTe

Gangqiang Zha; Wanqi Jie; Tingting Tan; Wenhua Zhang; Faqiang Xu

doi:10.1021/jp0734070

The interface reaction and schottky barrier between metals and CdZnTe

Gangqiang Zha, Wanqi Jie, Tingting Tan, Wenhua Zhang, Faqiang Xu

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The Schottky barrier heights of Au and Ag contacts on the clean CdZnTe surfaces were measured by synchrotron radiation photoemission spectroscopy (SRPES). Meanwhile, the interface reactions between metals and CdZnTe were determined. The interface reaction was found to be a critical factor determining the barrier heights between metals and CdZnTe. Ohmic contact was obtained by electroless deposition of AuCl₃ solution, and the interface chemical reaction and interface layer were analyzed. The CdTeO₃ interface induced ohmic contact model is proposed to explain the electrical properties of electroless Au contacts with different treatments.

Original language	English
Pages (from-to)	12834-12838
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	111
Issue number	34
DOIs	https://doi.org/10.1021/jp0734070
State	Published - 30 Aug 2007

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abstract = "The Schottky barrier heights of Au and Ag contacts on the clean CdZnTe surfaces were measured by synchrotron radiation photoemission spectroscopy (SRPES). Meanwhile, the interface reactions between metals and CdZnTe were determined. The interface reaction was found to be a critical factor determining the barrier heights between metals and CdZnTe. Ohmic contact was obtained by electroless deposition of AuCl3 solution, and the interface chemical reaction and interface layer were analyzed. The CdTeO3 interface induced ohmic contact model is proposed to explain the electrical properties of electroless Au contacts with different treatments.",

author = "Gangqiang Zha and Wanqi Jie and Tingting Tan and Wenhua Zhang and Faqiang Xu",

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T1 - The interface reaction and schottky barrier between metals and CdZnTe

AU - Zha, Gangqiang

AU - Jie, Wanqi

AU - Tan, Tingting

AU - Zhang, Wenhua

AU - Xu, Faqiang

PY - 2007/8/30

Y1 - 2007/8/30

N2 - The Schottky barrier heights of Au and Ag contacts on the clean CdZnTe surfaces were measured by synchrotron radiation photoemission spectroscopy (SRPES). Meanwhile, the interface reactions between metals and CdZnTe were determined. The interface reaction was found to be a critical factor determining the barrier heights between metals and CdZnTe. Ohmic contact was obtained by electroless deposition of AuCl3 solution, and the interface chemical reaction and interface layer were analyzed. The CdTeO3 interface induced ohmic contact model is proposed to explain the electrical properties of electroless Au contacts with different treatments.

AB - The Schottky barrier heights of Au and Ag contacts on the clean CdZnTe surfaces were measured by synchrotron radiation photoemission spectroscopy (SRPES). Meanwhile, the interface reactions between metals and CdZnTe were determined. The interface reaction was found to be a critical factor determining the barrier heights between metals and CdZnTe. Ohmic contact was obtained by electroless deposition of AuCl3 solution, and the interface chemical reaction and interface layer were analyzed. The CdTeO3 interface induced ohmic contact model is proposed to explain the electrical properties of electroless Au contacts with different treatments.

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EP - 12838

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 34

ER -

The interface reaction and schottky barrier between metals and CdZnTe

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