Study on surface chemical polishing of HgInTe wafers

Yang Yang; Ling Hang Wang; Wan Qi Jie; Ya Bin Wang; Li Fu

Study on surface chemical polishing of HgInTe wafers

Yang Yang, Ling Hang Wang, Wan Qi Jie, Ya Bin Wang, Li Fu

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

The surface chemical polishing technique of HgInTe (MIT) wafers was investigated. Br₂-C₃H₇ON and Br₂-MeOH solutions with the different concentrations were used as the chemical polishing agent. The experimental results show that the wafers in 5% Br₂-C₃H₇ON had a stable erosion rate, which could be easily controlled. The surface scratches were effectively removed and a shiny surface was obtained. Through AFM analysis, it was proved that the surface roughness could be reduced by about 67%. MIT wafers in 5% Br₂-MeOH, however, was eroded very fast and had a rougher surface.

源语言	英语
页（从-至）	535-538
页数	4
期刊	Rengong Jingti Xuebao/Journal of Synthetic Crystals
卷	38
期	2
出版状态	已出版 - 4月 2009

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title = "Study on surface chemical polishing of HgInTe wafers",

abstract = "The surface chemical polishing technique of HgInTe (MIT) wafers was investigated. Br2-C3H7ON and Br2-MeOH solutions with the different concentrations were used as the chemical polishing agent. The experimental results show that the wafers in 5% Br2-C3H7ON had a stable erosion rate, which could be easily controlled. The surface scratches were effectively removed and a shiny surface was obtained. Through AFM analysis, it was proved that the surface roughness could be reduced by about 67%. MIT wafers in 5% Br2-MeOH, however, was eroded very fast and had a rougher surface.",

keywords = "Chemical polishing, Erosion rate, HgInTe, Surface roughness",

author = "Yang Yang and Wang, {Ling Hang} and Jie, {Wan Qi} and Wang, {Ya Bin} and Li Fu",

year = "2009",

month = apr,

language = "英语",

volume = "38",

pages = "535--538",

journal = "Rengong Jingti Xuebao/Journal of Synthetic Crystals",

issn = "1000-985X",

publisher = "Chinese Ceramic Society",

number = "2",

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TY - JOUR

T1 - Study on surface chemical polishing of HgInTe wafers

AU - Yang, Yang

AU - Wang, Ling Hang

AU - Jie, Wan Qi

AU - Wang, Ya Bin

AU - Fu, Li

PY - 2009/4

Y1 - 2009/4

N2 - The surface chemical polishing technique of HgInTe (MIT) wafers was investigated. Br2-C3H7ON and Br2-MeOH solutions with the different concentrations were used as the chemical polishing agent. The experimental results show that the wafers in 5% Br2-C3H7ON had a stable erosion rate, which could be easily controlled. The surface scratches were effectively removed and a shiny surface was obtained. Through AFM analysis, it was proved that the surface roughness could be reduced by about 67%. MIT wafers in 5% Br2-MeOH, however, was eroded very fast and had a rougher surface.

AB - The surface chemical polishing technique of HgInTe (MIT) wafers was investigated. Br2-C3H7ON and Br2-MeOH solutions with the different concentrations were used as the chemical polishing agent. The experimental results show that the wafers in 5% Br2-C3H7ON had a stable erosion rate, which could be easily controlled. The surface scratches were effectively removed and a shiny surface was obtained. Through AFM analysis, it was proved that the surface roughness could be reduced by about 67%. MIT wafers in 5% Br2-MeOH, however, was eroded very fast and had a rougher surface.

KW - Chemical polishing

KW - Erosion rate

KW - HgInTe

KW - Surface roughness

UR - http://www.scopus.com/inward/record.url?scp=65549132537&partnerID=8YFLogxK

M3 - 文章

AN - SCOPUS:65549132537

SN - 1000-985X

VL - 38

SP - 535

EP - 538

JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals

JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals

IS - 2

ER -

Study on surface chemical polishing of HgInTe wafers

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