Study on surface chemical polishing of HgInTe wafers

Yang Yang; Ling Hang Wang; Wan Qi Jie; Ya Bin Wang; Li Fu

Study on surface chemical polishing of HgInTe wafers

Yang Yang, Ling Hang Wang, Wan Qi Jie, Ya Bin Wang, Li Fu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The surface chemical polishing technique of HgInTe (MIT) wafers was investigated. Br₂-C₃H₇ON and Br₂-MeOH solutions with the different concentrations were used as the chemical polishing agent. The experimental results show that the wafers in 5% Br₂-C₃H₇ON had a stable erosion rate, which could be easily controlled. The surface scratches were effectively removed and a shiny surface was obtained. Through AFM analysis, it was proved that the surface roughness could be reduced by about 67%. MIT wafers in 5% Br₂-MeOH, however, was eroded very fast and had a rougher surface.

Original language	English
Pages (from-to)	535-538
Number of pages	4
Journal	Rengong Jingti Xuebao/Journal of Synthetic Crystals
Volume	38
Issue number	2
State	Published - Apr 2009

Keywords

Chemical polishing
Erosion rate
HgInTe
Surface roughness

Cite this

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title = "Study on surface chemical polishing of HgInTe wafers",

abstract = "The surface chemical polishing technique of HgInTe (MIT) wafers was investigated. Br2-C3H7ON and Br2-MeOH solutions with the different concentrations were used as the chemical polishing agent. The experimental results show that the wafers in 5% Br2-C3H7ON had a stable erosion rate, which could be easily controlled. The surface scratches were effectively removed and a shiny surface was obtained. Through AFM analysis, it was proved that the surface roughness could be reduced by about 67%. MIT wafers in 5% Br2-MeOH, however, was eroded very fast and had a rougher surface.",

keywords = "Chemical polishing, Erosion rate, HgInTe, Surface roughness",

author = "Yang Yang and Wang, {Ling Hang} and Jie, {Wan Qi} and Wang, {Ya Bin} and Li Fu",

year = "2009",

month = apr,

language = "英语",

volume = "38",

pages = "535--538",

journal = "Rengong Jingti Xuebao/Journal of Synthetic Crystals",

issn = "1000-985X",

publisher = "Chinese Ceramic Society",

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T1 - Study on surface chemical polishing of HgInTe wafers

AU - Yang, Yang

AU - Wang, Ling Hang

AU - Jie, Wan Qi

AU - Wang, Ya Bin

AU - Fu, Li

PY - 2009/4

Y1 - 2009/4

N2 - The surface chemical polishing technique of HgInTe (MIT) wafers was investigated. Br2-C3H7ON and Br2-MeOH solutions with the different concentrations were used as the chemical polishing agent. The experimental results show that the wafers in 5% Br2-C3H7ON had a stable erosion rate, which could be easily controlled. The surface scratches were effectively removed and a shiny surface was obtained. Through AFM analysis, it was proved that the surface roughness could be reduced by about 67%. MIT wafers in 5% Br2-MeOH, however, was eroded very fast and had a rougher surface.

AB - The surface chemical polishing technique of HgInTe (MIT) wafers was investigated. Br2-C3H7ON and Br2-MeOH solutions with the different concentrations were used as the chemical polishing agent. The experimental results show that the wafers in 5% Br2-C3H7ON had a stable erosion rate, which could be easily controlled. The surface scratches were effectively removed and a shiny surface was obtained. Through AFM analysis, it was proved that the surface roughness could be reduced by about 67%. MIT wafers in 5% Br2-MeOH, however, was eroded very fast and had a rougher surface.

KW - Chemical polishing

KW - Erosion rate

KW - HgInTe

KW - Surface roughness

UR - http://www.scopus.com/inward/record.url?scp=65549132537&partnerID=8YFLogxK

M3 - 文章

AN - SCOPUS:65549132537

SN - 1000-985X

VL - 38

SP - 535

EP - 538

JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals

JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals

IS - 2

ER -

Study on surface chemical polishing of HgInTe wafers

Abstract

Keywords

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