Role of deposition temperature on performance of HfOx-based resistive switching

Tingting Guo; Tingting Tan; Zhengtang Liu

doi:10.1007/s00339-015-9178-0

Role of deposition temperature on performance of HfO_x-based resistive switching

Tingting Guo, Tingting Tan, Zhengtang Liu

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

The HfO_x films grown on Pt substrates were deposited at different temperatures by RF magnetron sputtering. The crystal quality of HfO_x film increased with the increasing deposition temperature. Typical bipolar resistive switching (RS) characteristics were observed in prepared samples. The sample deposited at 100 °C showed the best RS performance with large ON/OFF ratio, concentrated distribution of switching voltages and good reliability. Reset-first RS behavior was observed for the 300 °C deposited sample due to the high density of defects and the diffusion of Cu in the film. The distinct RS behaviors are closely related to the microproperties of the films. The possible switching mechanisms were discussed.

源语言	英语
页（从-至）	121-125
页数	5
期刊	Applied Physics A: Materials Science and Processing
卷	120
期	1
DOI	https://doi.org/10.1007/s00339-015-9178-0
出版状态	已出版 - 10 7月 2015

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AB - The HfOx films grown on Pt substrates were deposited at different temperatures by RF magnetron sputtering. The crystal quality of HfOx film increased with the increasing deposition temperature. Typical bipolar resistive switching (RS) characteristics were observed in prepared samples. The sample deposited at 100 °C showed the best RS performance with large ON/OFF ratio, concentrated distribution of switching voltages and good reliability. Reset-first RS behavior was observed for the 300 °C deposited sample due to the high density of defects and the diffusion of Cu in the film. The distinct RS behaviors are closely related to the microproperties of the films. The possible switching mechanisms were discussed.

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Role of deposition temperature on performance of HfOx-based resistive switching

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Role of deposition temperature on performance of HfO_x-based resistive switching