Role of deposition temperature on performance of HfOx-based resistive switching

Tingting Guo; Tingting Tan; Zhengtang Liu

doi:10.1007/s00339-015-9178-0

Role of deposition temperature on performance of HfO_x-based resistive switching

Tingting Guo, Tingting Tan, Zhengtang Liu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The HfO_x films grown on Pt substrates were deposited at different temperatures by RF magnetron sputtering. The crystal quality of HfO_x film increased with the increasing deposition temperature. Typical bipolar resistive switching (RS) characteristics were observed in prepared samples. The sample deposited at 100 °C showed the best RS performance with large ON/OFF ratio, concentrated distribution of switching voltages and good reliability. Reset-first RS behavior was observed for the 300 °C deposited sample due to the high density of defects and the diffusion of Cu in the film. The distinct RS behaviors are closely related to the microproperties of the films. The possible switching mechanisms were discussed.

Original language	English
Pages (from-to)	121-125
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	120
Issue number	1
DOIs	https://doi.org/10.1007/s00339-015-9178-0
State	Published - 10 Jul 2015

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abstract = "The HfOx films grown on Pt substrates were deposited at different temperatures by RF magnetron sputtering. The crystal quality of HfOx film increased with the increasing deposition temperature. Typical bipolar resistive switching (RS) characteristics were observed in prepared samples. The sample deposited at 100 °C showed the best RS performance with large ON/OFF ratio, concentrated distribution of switching voltages and good reliability. Reset-first RS behavior was observed for the 300 °C deposited sample due to the high density of defects and the diffusion of Cu in the film. The distinct RS behaviors are closely related to the microproperties of the films. The possible switching mechanisms were discussed.",

author = "Tingting Guo and Tingting Tan and Zhengtang Liu",

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N2 - The HfOx films grown on Pt substrates were deposited at different temperatures by RF magnetron sputtering. The crystal quality of HfOx film increased with the increasing deposition temperature. Typical bipolar resistive switching (RS) characteristics were observed in prepared samples. The sample deposited at 100 °C showed the best RS performance with large ON/OFF ratio, concentrated distribution of switching voltages and good reliability. Reset-first RS behavior was observed for the 300 °C deposited sample due to the high density of defects and the diffusion of Cu in the film. The distinct RS behaviors are closely related to the microproperties of the films. The possible switching mechanisms were discussed.

AB - The HfOx films grown on Pt substrates were deposited at different temperatures by RF magnetron sputtering. The crystal quality of HfOx film increased with the increasing deposition temperature. Typical bipolar resistive switching (RS) characteristics were observed in prepared samples. The sample deposited at 100 °C showed the best RS performance with large ON/OFF ratio, concentrated distribution of switching voltages and good reliability. Reset-first RS behavior was observed for the 300 °C deposited sample due to the high density of defects and the diffusion of Cu in the film. The distinct RS behaviors are closely related to the microproperties of the films. The possible switching mechanisms were discussed.

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Role of deposition temperature on performance of HfO_x-based resistive switching

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