Preparation and infrared emissivity of ZnO: Al (AZO) thin films

Dongmei Zhu; Kun Li; Fa Luo; Wancheng Zhou

doi:10.1016/j.apsusc.2009.01.068

Preparation and infrared emissivity of ZnO: Al (AZO) thin films

Dongmei Zhu, Kun Li, Fa Luo, Wancheng Zhou

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

74 引用（Scopus）

摘要

ZnO:Al(AZO) thin films with different Al-doped concentration were developed under different temperature. The effects of the temperature and Al-doped concentration on the infrared emissivity were investigated. Results show that the crystalline phase of the AZO films is hexagonal wurtzite which is the same as that of the un-doped ZnO film. The crystalline size become larger and the particle shapes become more regular with the increase of temperature, which lead to the increase of resistivity and the decreases of the infrared emissivity.

源语言	英语
页（从-至）	6145-6148
页数	4
期刊	Applied Surface Science
卷	255
期	12
DOI	https://doi.org/10.1016/j.apsusc.2009.01.068
出版状态	已出版 - 1 4月 2009

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10.1016/j.apsusc.2009.01.068

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@article{5f4e3b2019b9418fb92cc3c311570d6b,

title = "Preparation and infrared emissivity of ZnO: Al (AZO) thin films",

abstract = "ZnO:Al(AZO) thin films with different Al-doped concentration were developed under different temperature. The effects of the temperature and Al-doped concentration on the infrared emissivity were investigated. Results show that the crystalline phase of the AZO films is hexagonal wurtzite which is the same as that of the un-doped ZnO film. The crystalline size become larger and the particle shapes become more regular with the increase of temperature, which lead to the increase of resistivity and the decreases of the infrared emissivity.",

keywords = "Crystallization, Infrared emissivity, Thin film",

author = "Dongmei Zhu and Kun Li and Fa Luo and Wancheng Zhou",

year = "2009",

month = apr,

day = "1",

doi = "10.1016/j.apsusc.2009.01.068",

language = "英语",

volume = "255",

pages = "6145--6148",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "12",

}

TY - JOUR

T1 - Preparation and infrared emissivity of ZnO

T2 - Al (AZO) thin films

AU - Zhu, Dongmei

AU - Li, Kun

AU - Luo, Fa

AU - Zhou, Wancheng

PY - 2009/4/1

Y1 - 2009/4/1

N2 - ZnO:Al(AZO) thin films with different Al-doped concentration were developed under different temperature. The effects of the temperature and Al-doped concentration on the infrared emissivity were investigated. Results show that the crystalline phase of the AZO films is hexagonal wurtzite which is the same as that of the un-doped ZnO film. The crystalline size become larger and the particle shapes become more regular with the increase of temperature, which lead to the increase of resistivity and the decreases of the infrared emissivity.

AB - ZnO:Al(AZO) thin films with different Al-doped concentration were developed under different temperature. The effects of the temperature and Al-doped concentration on the infrared emissivity were investigated. Results show that the crystalline phase of the AZO films is hexagonal wurtzite which is the same as that of the un-doped ZnO film. The crystalline size become larger and the particle shapes become more regular with the increase of temperature, which lead to the increase of resistivity and the decreases of the infrared emissivity.

KW - Crystallization

KW - Infrared emissivity

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=62349137045&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2009.01.068

DO - 10.1016/j.apsusc.2009.01.068

M3 - 文章

AN - SCOPUS:62349137045

SN - 0169-4332

VL - 255

SP - 6145

EP - 6148

JO - Applied Surface Science

JF - Applied Surface Science

IS - 12

ER -

Preparation and infrared emissivity of ZnO: Al (AZO) thin films

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