Preparation and infrared emissivity of ZnO: Al (AZO) thin films

Dongmei Zhu; Kun Li; Fa Luo; Wancheng Zhou

doi:10.1016/j.apsusc.2009.01.068

Preparation and infrared emissivity of ZnO: Al (AZO) thin films

Dongmei Zhu, Kun Li, Fa Luo, Wancheng Zhou

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

ZnO:Al(AZO) thin films with different Al-doped concentration were developed under different temperature. The effects of the temperature and Al-doped concentration on the infrared emissivity were investigated. Results show that the crystalline phase of the AZO films is hexagonal wurtzite which is the same as that of the un-doped ZnO film. The crystalline size become larger and the particle shapes become more regular with the increase of temperature, which lead to the increase of resistivity and the decreases of the infrared emissivity.

Original language	English
Pages (from-to)	6145-6148
Number of pages	4
Journal	Applied Surface Science
Volume	255
Issue number	12
DOIs	https://doi.org/10.1016/j.apsusc.2009.01.068
State	Published - 1 Apr 2009

Keywords

Crystallization
Infrared emissivity
Thin film

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10.1016/j.apsusc.2009.01.068

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abstract = "ZnO:Al(AZO) thin films with different Al-doped concentration were developed under different temperature. The effects of the temperature and Al-doped concentration on the infrared emissivity were investigated. Results show that the crystalline phase of the AZO films is hexagonal wurtzite which is the same as that of the un-doped ZnO film. The crystalline size become larger and the particle shapes become more regular with the increase of temperature, which lead to the increase of resistivity and the decreases of the infrared emissivity.",

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author = "Dongmei Zhu and Kun Li and Fa Luo and Wancheng Zhou",

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T1 - Preparation and infrared emissivity of ZnO

T2 - Al (AZO) thin films

AU - Zhu, Dongmei

AU - Li, Kun

AU - Luo, Fa

AU - Zhou, Wancheng

PY - 2009/4/1

Y1 - 2009/4/1

N2 - ZnO:Al(AZO) thin films with different Al-doped concentration were developed under different temperature. The effects of the temperature and Al-doped concentration on the infrared emissivity were investigated. Results show that the crystalline phase of the AZO films is hexagonal wurtzite which is the same as that of the un-doped ZnO film. The crystalline size become larger and the particle shapes become more regular with the increase of temperature, which lead to the increase of resistivity and the decreases of the infrared emissivity.

AB - ZnO:Al(AZO) thin films with different Al-doped concentration were developed under different temperature. The effects of the temperature and Al-doped concentration on the infrared emissivity were investigated. Results show that the crystalline phase of the AZO films is hexagonal wurtzite which is the same as that of the un-doped ZnO film. The crystalline size become larger and the particle shapes become more regular with the increase of temperature, which lead to the increase of resistivity and the decreases of the infrared emissivity.

KW - Crystallization

KW - Infrared emissivity

KW - Thin film

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DO - 10.1016/j.apsusc.2009.01.068

M3 - 文章

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SN - 0169-4332

VL - 255

SP - 6145

EP - 6148

JO - Applied Surface Science

JF - Applied Surface Science

IS - 12

ER -

Preparation and infrared emissivity of ZnO: Al (AZO) thin films

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Keywords

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