Optical and electrical properties of indium-doped Cd_0.9Zn_0.1Te crystal

The indium-doped CdZnTe crystal was characterized by PL spectra at 10 K and IR transmission spectra, as well as its current-voltage behavior at room temperature. The results showed that indium atoms substituted for the Cd vacancy and produced ionized donors [In_Cd]⁺, i.e. indium doping element recombined with [V_cd]^2- and formed the singly negative defect complex A-center [In_Cd⁺ {radical dot} V_Cd^{2 -}]^- and the neutral ones [2 In_Cd⁺ {radical dot} V_Cd^{2 -}]⁰ and [In_cd⁺ {radical dot} (In_Cd⁺ {radical dot} V_Cd^{2 -})^-]⁰. Indium doping also increased the IR absorption of the CdZnTe crystal due to the lattice absorption and free-carrier absorption. Meanwhile, indium doping increased the electrical resistivity and decreased the leakage current of CdZnTe crystals remarkably.