Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal

Qiang Li; Wanqi Jie; Li Fu; Tao Wang; Ge Yang; Xuxu Bai; Gangqiang Zha

doi:10.1016/j.jcrysgro.2006.07.030

Optical and electrical properties of indium-doped Cd_0.9Zn_0.1Te crystal

Qiang Li, Wanqi Jie, Li Fu, Tao Wang, Ge Yang, Xuxu Bai, Gangqiang Zha

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

The indium-doped CdZnTe crystal was characterized by PL spectra at 10 K and IR transmission spectra, as well as its current-voltage behavior at room temperature. The results showed that indium atoms substituted for the Cd vacancy and produced ionized donors [In_Cd]⁺, i.e. indium doping element recombined with [V_cd]^2- and formed the singly negative defect complex A-center [In_Cd⁺ {radical dot} V_Cd^{2 -}]^- and the neutral ones [2 In_Cd⁺ {radical dot} V_Cd^{2 -}]⁰ and [In_cd⁺ {radical dot} (In_Cd⁺ {radical dot} V_Cd^{2 -})^-]⁰. Indium doping also increased the IR absorption of the CdZnTe crystal due to the lattice absorption and free-carrier absorption. Meanwhile, indium doping increased the electrical resistivity and decreased the leakage current of CdZnTe crystals remarkably.

Original language	English
Pages (from-to)	124-128
Number of pages	5
Journal	Journal of Crystal Growth
Volume	295
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.07.030
State	Published - 1 Oct 2006

Keywords

A1. Doping
A1. Electrical properties
A1. Optical properties
A1. Photoluminescence
B1. CdZnTe

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10.1016/j.jcrysgro.2006.07.030

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title = "Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal",

abstract = "The indium-doped CdZnTe crystal was characterized by PL spectra at 10 K and IR transmission spectra, as well as its current-voltage behavior at room temperature. The results showed that indium atoms substituted for the Cd vacancy and produced ionized donors [InCd]+, i.e. indium doping element recombined with [Vcd]2- and formed the singly negative defect complex A-center [InCd+ {radical dot} VCd2 -]- and the neutral ones [2 InCd+ {radical dot} VCd2 -]0 and [Incd+ {radical dot} (InCd+ {radical dot} VCd2 -)-]0. Indium doping also increased the IR absorption of the CdZnTe crystal due to the lattice absorption and free-carrier absorption. Meanwhile, indium doping increased the electrical resistivity and decreased the leakage current of CdZnTe crystals remarkably.",

keywords = "A1. Doping, A1. Electrical properties, A1. Optical properties, A1. Photoluminescence, B1. CdZnTe",

author = "Qiang Li and Wanqi Jie and Li Fu and Tao Wang and Ge Yang and Xuxu Bai and Gangqiang Zha",

year = "2006",

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day = "1",

doi = "10.1016/j.jcrysgro.2006.07.030",

language = "英语",

volume = "295",

pages = "124--128",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal

AU - Li, Qiang

AU - Jie, Wanqi

AU - Fu, Li

AU - Wang, Tao

AU - Yang, Ge

AU - Bai, Xuxu

AU - Zha, Gangqiang

PY - 2006/10/1

Y1 - 2006/10/1

N2 - The indium-doped CdZnTe crystal was characterized by PL spectra at 10 K and IR transmission spectra, as well as its current-voltage behavior at room temperature. The results showed that indium atoms substituted for the Cd vacancy and produced ionized donors [InCd]+, i.e. indium doping element recombined with [Vcd]2- and formed the singly negative defect complex A-center [InCd+ {radical dot} VCd2 -]- and the neutral ones [2 InCd+ {radical dot} VCd2 -]0 and [Incd+ {radical dot} (InCd+ {radical dot} VCd2 -)-]0. Indium doping also increased the IR absorption of the CdZnTe crystal due to the lattice absorption and free-carrier absorption. Meanwhile, indium doping increased the electrical resistivity and decreased the leakage current of CdZnTe crystals remarkably.

AB - The indium-doped CdZnTe crystal was characterized by PL spectra at 10 K and IR transmission spectra, as well as its current-voltage behavior at room temperature. The results showed that indium atoms substituted for the Cd vacancy and produced ionized donors [InCd]+, i.e. indium doping element recombined with [Vcd]2- and formed the singly negative defect complex A-center [InCd+ {radical dot} VCd2 -]- and the neutral ones [2 InCd+ {radical dot} VCd2 -]0 and [Incd+ {radical dot} (InCd+ {radical dot} VCd2 -)-]0. Indium doping also increased the IR absorption of the CdZnTe crystal due to the lattice absorption and free-carrier absorption. Meanwhile, indium doping increased the electrical resistivity and decreased the leakage current of CdZnTe crystals remarkably.

KW - A1. Doping

KW - A1. Electrical properties

KW - A1. Optical properties

KW - A1. Photoluminescence

KW - B1. CdZnTe

UR - http://www.scopus.com/inward/record.url?scp=33748983919&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2006.07.030

DO - 10.1016/j.jcrysgro.2006.07.030

M3 - 文章

AN - SCOPUS:33748983919

SN - 0022-0248

VL - 295

SP - 124

EP - 128

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Optical and electrical properties of indium-doped Cd_0.9Zn_0.1Te crystal

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Keywords

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