Multiferroic and resistive switching behaviors in BiFe 0.95Cr0.05O3 thin films deposited on Pt/Ti/SiO2/Si substrates

B. C. Luo; J. Wang; X. S. Cao; K. X. Jin; C. L. Chen

doi:10.1007/s00339-013-7592-8

Multiferroic and resistive switching behaviors in BiFe _0.95Cr_0.05O₃ thin films deposited on Pt/Ti/SiO₂/Si substrates

B. C. Luo, J. Wang, X. S. Cao, K. X. Jin, C. L. Chen

材料学院

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Multiferroic and resistive switching properties of single-phase polycrystalline perovskite BiFe_0.95Cr_0.05O₃ (BFCO) thin films grown on Pt/Ti/SiO₂/Si substrates by radio-frequency magnetron sputtering were investigated. The BFCO film shows ferroelectric and magnetic properties simultaneously at room temperature, and also exhibits a good piezoelectric property with remanent effective piezoelectric coefficient d _33,f ∼55±4 pm/V. An obviously resistive switching behavior was observed in the BFCO thin film at room temperature, which was discussed by the filamentary conduction mechanism associated with the redistribution of oxygen vacancies.

源语言	英语
页（从-至）	779-785
页数	7
期刊	Applied Physics A: Materials Science and Processing
卷	113
期	3
DOI	https://doi.org/10.1007/s00339-013-7592-8
出版状态	已出版 - 11月 2013

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title = "Multiferroic and resistive switching behaviors in BiFe 0.95Cr0.05O3 thin films deposited on Pt/Ti/SiO2/Si substrates",

abstract = "Multiferroic and resistive switching properties of single-phase polycrystalline perovskite BiFe0.95Cr0.05O3 (BFCO) thin films grown on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering were investigated. The BFCO film shows ferroelectric and magnetic properties simultaneously at room temperature, and also exhibits a good piezoelectric property with remanent effective piezoelectric coefficient d 33,f ∼55±4 pm/V. An obviously resistive switching behavior was observed in the BFCO thin film at room temperature, which was discussed by the filamentary conduction mechanism associated with the redistribution of oxygen vacancies.",

author = "Luo, {B. C.} and J. Wang and Cao, {X. S.} and Jin, {K. X.} and Chen, {C. L.}",

year = "2013",

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doi = "10.1007/s00339-013-7592-8",

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T1 - Multiferroic and resistive switching behaviors in BiFe 0.95Cr0.05O3 thin films deposited on Pt/Ti/SiO2/Si substrates

AU - Luo, B. C.

AU - Wang, J.

AU - Cao, X. S.

AU - Jin, K. X.

AU - Chen, C. L.

PY - 2013/11

Y1 - 2013/11

N2 - Multiferroic and resistive switching properties of single-phase polycrystalline perovskite BiFe0.95Cr0.05O3 (BFCO) thin films grown on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering were investigated. The BFCO film shows ferroelectric and magnetic properties simultaneously at room temperature, and also exhibits a good piezoelectric property with remanent effective piezoelectric coefficient d 33,f ∼55±4 pm/V. An obviously resistive switching behavior was observed in the BFCO thin film at room temperature, which was discussed by the filamentary conduction mechanism associated with the redistribution of oxygen vacancies.

AB - Multiferroic and resistive switching properties of single-phase polycrystalline perovskite BiFe0.95Cr0.05O3 (BFCO) thin films grown on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering were investigated. The BFCO film shows ferroelectric and magnetic properties simultaneously at room temperature, and also exhibits a good piezoelectric property with remanent effective piezoelectric coefficient d 33,f ∼55±4 pm/V. An obviously resistive switching behavior was observed in the BFCO thin film at room temperature, which was discussed by the filamentary conduction mechanism associated with the redistribution of oxygen vacancies.

UR - http://www.scopus.com/inward/record.url?scp=84887207383&partnerID=8YFLogxK

U2 - 10.1007/s00339-013-7592-8

DO - 10.1007/s00339-013-7592-8

M3 - 文章

AN - SCOPUS:84887207383

SN - 0947-8396

VL - 113

SP - 779

EP - 785

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 3

ER -

Multiferroic and resistive switching behaviors in BiFe 0.95Cr0.05O3 thin films deposited on Pt/Ti/SiO2/Si substrates

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Multiferroic and resistive switching behaviors in BiFe _0.95Cr_0.05O₃ thin films deposited on Pt/Ti/SiO₂/Si substrates