Multiferroic and resistive switching behaviors in BiFe 0.95Cr0.05O3 thin films deposited on Pt/Ti/SiO2/Si substrates

B. C. Luo; J. Wang; X. S. Cao; K. X. Jin; C. L. Chen

doi:10.1007/s00339-013-7592-8

Multiferroic and resistive switching behaviors in BiFe _0.95Cr_0.05O₃ thin films deposited on Pt/Ti/SiO₂/Si substrates

B. C. Luo, J. Wang, X. S. Cao, K. X. Jin, C. L. Chen

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Multiferroic and resistive switching properties of single-phase polycrystalline perovskite BiFe_0.95Cr_0.05O₃ (BFCO) thin films grown on Pt/Ti/SiO₂/Si substrates by radio-frequency magnetron sputtering were investigated. The BFCO film shows ferroelectric and magnetic properties simultaneously at room temperature, and also exhibits a good piezoelectric property with remanent effective piezoelectric coefficient d _33,f ∼55±4 pm/V. An obviously resistive switching behavior was observed in the BFCO thin film at room temperature, which was discussed by the filamentary conduction mechanism associated with the redistribution of oxygen vacancies.

Original language	English
Pages (from-to)	779-785
Number of pages	7
Journal	Applied Physics A: Materials Science and Processing
Volume	113
Issue number	3
DOIs	https://doi.org/10.1007/s00339-013-7592-8
State	Published - Nov 2013

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abstract = "Multiferroic and resistive switching properties of single-phase polycrystalline perovskite BiFe0.95Cr0.05O3 (BFCO) thin films grown on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering were investigated. The BFCO film shows ferroelectric and magnetic properties simultaneously at room temperature, and also exhibits a good piezoelectric property with remanent effective piezoelectric coefficient d 33,f ∼55±4 pm/V. An obviously resistive switching behavior was observed in the BFCO thin film at room temperature, which was discussed by the filamentary conduction mechanism associated with the redistribution of oxygen vacancies.",

author = "Luo, {B. C.} and J. Wang and Cao, {X. S.} and Jin, {K. X.} and Chen, {C. L.}",

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AU - Luo, B. C.

AU - Wang, J.

AU - Cao, X. S.

AU - Jin, K. X.

AU - Chen, C. L.

PY - 2013/11

Y1 - 2013/11

N2 - Multiferroic and resistive switching properties of single-phase polycrystalline perovskite BiFe0.95Cr0.05O3 (BFCO) thin films grown on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering were investigated. The BFCO film shows ferroelectric and magnetic properties simultaneously at room temperature, and also exhibits a good piezoelectric property with remanent effective piezoelectric coefficient d 33,f ∼55±4 pm/V. An obviously resistive switching behavior was observed in the BFCO thin film at room temperature, which was discussed by the filamentary conduction mechanism associated with the redistribution of oxygen vacancies.

AB - Multiferroic and resistive switching properties of single-phase polycrystalline perovskite BiFe0.95Cr0.05O3 (BFCO) thin films grown on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering were investigated. The BFCO film shows ferroelectric and magnetic properties simultaneously at room temperature, and also exhibits a good piezoelectric property with remanent effective piezoelectric coefficient d 33,f ∼55±4 pm/V. An obviously resistive switching behavior was observed in the BFCO thin film at room temperature, which was discussed by the filamentary conduction mechanism associated with the redistribution of oxygen vacancies.

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SN - 0947-8396

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JO - Applied Physics A: Materials Science and Processing

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Multiferroic and resistive switching behaviors in BiFe _0.95Cr_0.05O₃ thin films deposited on Pt/Ti/SiO₂/Si substrates

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