摘要
Polycarbosilane (PCS) was cured by oxidizing at different temperatures and pyrolyzed at 1000°C in vacuum. The dielectric properties of SiC ceramics were studied in X band. The ε′ and ε of SiC ceramics derived from oxidation-curing PCS decreased to 4 and 0.35, respectively, which attribute to the decrease of free carbon content and order. SiC ceramic derived from PCS cured at 180°C showed that reflection loss was lower than -10 dB in the frequency range from 8.2 to 11.3 GHz and the minimum value was -26.7 dB at 9.6 GHz, which exhibits a promising prospect as microwave-absorbing materials.
源语言 | 英语 |
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页(从-至) | 17-22 |
页数 | 6 |
期刊 | International Journal of Applied Ceramic Technology |
卷 | 13 |
期 | 1 |
DOI | |
出版状态 | 已出版 - 1 1月 2016 |