Effects of oxidation curing of polycarbosilane on dielectric and microwave absorption properties of PDCs-SiC ceramics

Yimin Shi; Fa Luo; Donghai Ding; Feng Wan; Wancheng Zhou; Dongmei Zhu

doi:10.1111/ijac.12412

Effects of oxidation curing of polycarbosilane on dielectric and microwave absorption properties of PDCs-SiC ceramics

Yimin Shi, Fa Luo, Donghai Ding, Feng Wan, Wancheng Zhou, Dongmei Zhu

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Polycarbosilane (PCS) was cured by oxidizing at different temperatures and pyrolyzed at 1000°C in vacuum. The dielectric properties of SiC ceramics were studied in X band. The ε′ and ε of SiC ceramics derived from oxidation-curing PCS decreased to 4 and 0.35, respectively, which attribute to the decrease of free carbon content and order. SiC ceramic derived from PCS cured at 180°C showed that reflection loss was lower than -10 dB in the frequency range from 8.2 to 11.3 GHz and the minimum value was -26.7 dB at 9.6 GHz, which exhibits a promising prospect as microwave-absorbing materials.

Original language	English
Pages (from-to)	17-22
Number of pages	6
Journal	International Journal of Applied Ceramic Technology
Volume	13
Issue number	1
DOIs	https://doi.org/10.1111/ijac.12412
State	Published - 1 Jan 2016

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title = "Effects of oxidation curing of polycarbosilane on dielectric and microwave absorption properties of PDCs-SiC ceramics",

abstract = "Polycarbosilane (PCS) was cured by oxidizing at different temperatures and pyrolyzed at 1000°C in vacuum. The dielectric properties of SiC ceramics were studied in X band. The ε′ and ε of SiC ceramics derived from oxidation-curing PCS decreased to 4 and 0.35, respectively, which attribute to the decrease of free carbon content and order. SiC ceramic derived from PCS cured at 180°C showed that reflection loss was lower than -10 dB in the frequency range from 8.2 to 11.3 GHz and the minimum value was -26.7 dB at 9.6 GHz, which exhibits a promising prospect as microwave-absorbing materials.",

author = "Yimin Shi and Fa Luo and Donghai Ding and Feng Wan and Wancheng Zhou and Dongmei Zhu",

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T1 - Effects of oxidation curing of polycarbosilane on dielectric and microwave absorption properties of PDCs-SiC ceramics

AU - Shi, Yimin

AU - Luo, Fa

AU - Ding, Donghai

AU - Wan, Feng

AU - Zhou, Wancheng

AU - Zhu, Dongmei

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Polycarbosilane (PCS) was cured by oxidizing at different temperatures and pyrolyzed at 1000°C in vacuum. The dielectric properties of SiC ceramics were studied in X band. The ε′ and ε of SiC ceramics derived from oxidation-curing PCS decreased to 4 and 0.35, respectively, which attribute to the decrease of free carbon content and order. SiC ceramic derived from PCS cured at 180°C showed that reflection loss was lower than -10 dB in the frequency range from 8.2 to 11.3 GHz and the minimum value was -26.7 dB at 9.6 GHz, which exhibits a promising prospect as microwave-absorbing materials.

AB - Polycarbosilane (PCS) was cured by oxidizing at different temperatures and pyrolyzed at 1000°C in vacuum. The dielectric properties of SiC ceramics were studied in X band. The ε′ and ε of SiC ceramics derived from oxidation-curing PCS decreased to 4 and 0.35, respectively, which attribute to the decrease of free carbon content and order. SiC ceramic derived from PCS cured at 180°C showed that reflection loss was lower than -10 dB in the frequency range from 8.2 to 11.3 GHz and the minimum value was -26.7 dB at 9.6 GHz, which exhibits a promising prospect as microwave-absorbing materials.

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JO - International Journal of Applied Ceramic Technology

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Effects of oxidation curing of polycarbosilane on dielectric and microwave absorption properties of PDCs-SiC ceramics

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