TY - JOUR
T1 - Effect of N2 flow rate on electromagnetic interference shielding effectiveness of TiNx films
AU - Lu, Linlin
AU - Luo, Fa
AU - Qing, Yuchang
AU - Zhou, Wancheng
AU - Zhu, Dongmei
AU - Dong, Jie
N1 - Publisher Copyright:
© 2018, Springer-Verlag GmbH Germany, part of Springer Nature.
PY - 2018/10/1
Y1 - 2018/10/1
N2 - TiNx films with different nitrogen contents were fabricated using direct current reactive magnetron sputtering. Influence of N2 flow rate on the resistivity and electromagnetic interference (EMI) shielding effectiveness (SE) of TiNx films was studied. The EMI SE of TiNx films was found to be related with the resistivity. With the rise of N2 flow rate, the resistivity of TiNx films increased, while the EMI SE decreased. When the N2 flow rate was 1 sccm, the EMI SE of TiNx films was over 20 dB with the thickness of 1.47 µm, which was much smaller than the thickness of the presently known EMI-shielding materials. The results indicated that TiNx films could be applied as ultrathin thickness, lightweight, and design flexibility shielding materials.
AB - TiNx films with different nitrogen contents were fabricated using direct current reactive magnetron sputtering. Influence of N2 flow rate on the resistivity and electromagnetic interference (EMI) shielding effectiveness (SE) of TiNx films was studied. The EMI SE of TiNx films was found to be related with the resistivity. With the rise of N2 flow rate, the resistivity of TiNx films increased, while the EMI SE decreased. When the N2 flow rate was 1 sccm, the EMI SE of TiNx films was over 20 dB with the thickness of 1.47 µm, which was much smaller than the thickness of the presently known EMI-shielding materials. The results indicated that TiNx films could be applied as ultrathin thickness, lightweight, and design flexibility shielding materials.
UR - http://www.scopus.com/inward/record.url?scp=85054152494&partnerID=8YFLogxK
U2 - 10.1007/s00339-018-2140-1
DO - 10.1007/s00339-018-2140-1
M3 - 文章
AN - SCOPUS:85054152494
SN - 0947-8396
VL - 124
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 10
M1 - 721
ER -