Effect of N2 flow rate on electromagnetic interference shielding effectiveness of TiNx films

Linlin Lu; Fa Luo; Yuchang Qing; Wancheng Zhou; Dongmei Zhu; Jie Dong

doi:10.1007/s00339-018-2140-1

Effect of N₂ flow rate on electromagnetic interference shielding effectiveness of TiN_x films

Linlin Lu, Fa Luo, Yuchang Qing, Wancheng Zhou, Dongmei Zhu, Jie Dong

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

TiN_x films with different nitrogen contents were fabricated using direct current reactive magnetron sputtering. Influence of N₂ flow rate on the resistivity and electromagnetic interference (EMI) shielding effectiveness (SE) of TiN_x films was studied. The EMI SE of TiN_x films was found to be related with the resistivity. With the rise of N₂ flow rate, the resistivity of TiN_x films increased, while the EMI SE decreased. When the N₂ flow rate was 1 sccm, the EMI SE of TiN_x films was over 20 dB with the thickness of 1.47 µm, which was much smaller than the thickness of the presently known EMI-shielding materials. The results indicated that TiN_x films could be applied as ultrathin thickness, lightweight, and design flexibility shielding materials.

Original language	English
Article number	721
Journal	Applied Physics A: Materials Science and Processing
Volume	124
Issue number	10
DOIs	https://doi.org/10.1007/s00339-018-2140-1
State	Published - 1 Oct 2018

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abstract = "TiNx films with different nitrogen contents were fabricated using direct current reactive magnetron sputtering. Influence of N2 flow rate on the resistivity and electromagnetic interference (EMI) shielding effectiveness (SE) of TiNx films was studied. The EMI SE of TiNx films was found to be related with the resistivity. With the rise of N2 flow rate, the resistivity of TiNx films increased, while the EMI SE decreased. When the N2 flow rate was 1 sccm, the EMI SE of TiNx films was over 20 dB with the thickness of 1.47 µm, which was much smaller than the thickness of the presently known EMI-shielding materials. The results indicated that TiNx films could be applied as ultrathin thickness, lightweight, and design flexibility shielding materials.",

author = "Linlin Lu and Fa Luo and Yuchang Qing and Wancheng Zhou and Dongmei Zhu and Jie Dong",

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T1 - Effect of N2 flow rate on electromagnetic interference shielding effectiveness of TiNx films

AU - Lu, Linlin

AU - Luo, Fa

AU - Qing, Yuchang

AU - Zhou, Wancheng

AU - Zhu, Dongmei

AU - Dong, Jie

PY - 2018/10/1

Y1 - 2018/10/1

N2 - TiNx films with different nitrogen contents were fabricated using direct current reactive magnetron sputtering. Influence of N2 flow rate on the resistivity and electromagnetic interference (EMI) shielding effectiveness (SE) of TiNx films was studied. The EMI SE of TiNx films was found to be related with the resistivity. With the rise of N2 flow rate, the resistivity of TiNx films increased, while the EMI SE decreased. When the N2 flow rate was 1 sccm, the EMI SE of TiNx films was over 20 dB with the thickness of 1.47 µm, which was much smaller than the thickness of the presently known EMI-shielding materials. The results indicated that TiNx films could be applied as ultrathin thickness, lightweight, and design flexibility shielding materials.

AB - TiNx films with different nitrogen contents were fabricated using direct current reactive magnetron sputtering. Influence of N2 flow rate on the resistivity and electromagnetic interference (EMI) shielding effectiveness (SE) of TiNx films was studied. The EMI SE of TiNx films was found to be related with the resistivity. With the rise of N2 flow rate, the resistivity of TiNx films increased, while the EMI SE decreased. When the N2 flow rate was 1 sccm, the EMI SE of TiNx films was over 20 dB with the thickness of 1.47 µm, which was much smaller than the thickness of the presently known EMI-shielding materials. The results indicated that TiNx films could be applied as ultrathin thickness, lightweight, and design flexibility shielding materials.

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Effect of N₂ flow rate on electromagnetic interference shielding effectiveness of TiN_x films

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