A Novel Circuit and Layout Design of SEU Tolerant SRAM in a 65nm CMOS Process

Engineering

• Soft Error 100%
• Simulation Result 50%
• Illustrates 50%
• Cross Section 50%
• Circuit Performance 50%
• Application Specific Integrated Circuit 50%
• Single Event Upset 50%
• Access Time 50%
• Bulk Silicon 50%