High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn2SiO4 nanowires

Hongqiang Wang; Guanghai Li; Lichao Jia; Liang Li; Guozhong Wang

doi:10.1039/b906787f

High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn₂SiO₄ nanowires

Hongqiang Wang, Guanghai Li, Lichao Jia, Liang Li, Guozhong Wang

Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A high-temperature anisotropic silicon-etching strategy is demonstrated to steer the growth of the horizontally localized parallel Zn₂SiO ₄ nanowires.

Original language	English
Pages (from-to)	3786-3788
Number of pages	3
Journal	Chemical Communications
Issue number	25
DOIs	https://doi.org/10.1039/b906787f
State	Published - 2009
Externally published	Yes

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title = "High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn2SiO4 nanowires",

abstract = "A high-temperature anisotropic silicon-etching strategy is demonstrated to steer the growth of the horizontally localized parallel Zn2SiO 4 nanowires.",

author = "Hongqiang Wang and Guanghai Li and Lichao Jia and Liang Li and Guozhong Wang",

year = "2009",

doi = "10.1039/b906787f",

language = "英语",

pages = "3786--3788",

journal = "Chemical Communications",

issn = "1359-7345",

publisher = "Royal Society of Chemistry",

number = "25",

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T1 - High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn2SiO4 nanowires

AU - Wang, Hongqiang

AU - Li, Guanghai

AU - Jia, Lichao

AU - Li, Liang

AU - Wang, Guozhong

PY - 2009

Y1 - 2009

N2 - A high-temperature anisotropic silicon-etching strategy is demonstrated to steer the growth of the horizontally localized parallel Zn2SiO 4 nanowires.

AB - A high-temperature anisotropic silicon-etching strategy is demonstrated to steer the growth of the horizontally localized parallel Zn2SiO 4 nanowires.

UR - http://www.scopus.com/inward/record.url?scp=67649866316&partnerID=8YFLogxK

U2 - 10.1039/b906787f

DO - 10.1039/b906787f

M3 - 文章

AN - SCOPUS:67649866316

SN - 1359-7345

SP - 3786

EP - 3788

JO - Chemical Communications

JF - Chemical Communications

IS - 25

ER -

High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn₂SiO₄ nanowires

Abstract

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