Epitaxial growth and electrical characterization of PBZT thin films by RF magnetron sputtering deposition

Huiqing Fan; Laijun Liu; Xiuli Chen; Jie Zhang; Wei Wang

doi:10.4028/0-87849-410-3.173

Epitaxial growth and electrical characterization of PBZT thin films by RF magnetron sputtering deposition

Huiqing Fan, Laijun Liu, Xiuli Chen, Jie Zhang, Wei Wang

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

Abstract

Barium modified lead zirconate titanate (PBZT) thin films were grown epitaxially on Pt/Ti/SiO₂/Si substrates by radio-frequency magnetron sputtering deposition and characterized by X-ray diffraction and scanning electron microscopy. Depending on the growth condition, a wide variation of crystal structure and morphology was evolved in PBZT thin films. The formation of phase structure and pyrochlore phase was strongly dependent on the oxygen partial pressure and re-evaporation of lead from the films during the deposition. Perovskite films were obtained by optimizing the deposition conditions and analyzed by the ferroelectric hysteresis (P∼E).

Original language	English
Pages (from-to)	173-176
Number of pages	4
Journal	Key Engineering Materials
Volume	336-338 I
DOIs	https://doi.org/10.4028/0-87849-410-3.173
State	Published - 2007

Keywords

Microstructure
PBZT
RF magnetron sputtering
Thin film

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title = "Epitaxial growth and electrical characterization of PBZT thin films by RF magnetron sputtering deposition",

abstract = "Barium modified lead zirconate titanate (PBZT) thin films were grown epitaxially on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering deposition and characterized by X-ray diffraction and scanning electron microscopy. Depending on the growth condition, a wide variation of crystal structure and morphology was evolved in PBZT thin films. The formation of phase structure and pyrochlore phase was strongly dependent on the oxygen partial pressure and re-evaporation of lead from the films during the deposition. Perovskite films were obtained by optimizing the deposition conditions and analyzed by the ferroelectric hysteresis (P∼E).",

keywords = "Microstructure, PBZT, RF magnetron sputtering, Thin film",

author = "Huiqing Fan and Laijun Liu and Xiuli Chen and Jie Zhang and Wei Wang",

year = "2007",

doi = "10.4028/0-87849-410-3.173",

language = "英语",

volume = "336-338 I",

pages = "173--176",

journal = "Key Engineering Materials",

issn = "1013-9826",

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TY - JOUR

T1 - Epitaxial growth and electrical characterization of PBZT thin films by RF magnetron sputtering deposition

AU - Fan, Huiqing

AU - Liu, Laijun

AU - Chen, Xiuli

AU - Zhang, Jie

AU - Wang, Wei

PY - 2007

Y1 - 2007

N2 - Barium modified lead zirconate titanate (PBZT) thin films were grown epitaxially on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering deposition and characterized by X-ray diffraction and scanning electron microscopy. Depending on the growth condition, a wide variation of crystal structure and morphology was evolved in PBZT thin films. The formation of phase structure and pyrochlore phase was strongly dependent on the oxygen partial pressure and re-evaporation of lead from the films during the deposition. Perovskite films were obtained by optimizing the deposition conditions and analyzed by the ferroelectric hysteresis (P∼E).

AB - Barium modified lead zirconate titanate (PBZT) thin films were grown epitaxially on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering deposition and characterized by X-ray diffraction and scanning electron microscopy. Depending on the growth condition, a wide variation of crystal structure and morphology was evolved in PBZT thin films. The formation of phase structure and pyrochlore phase was strongly dependent on the oxygen partial pressure and re-evaporation of lead from the films during the deposition. Perovskite films were obtained by optimizing the deposition conditions and analyzed by the ferroelectric hysteresis (P∼E).

KW - Microstructure

KW - PBZT

KW - RF magnetron sputtering

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=33947217348&partnerID=8YFLogxK

U2 - 10.4028/0-87849-410-3.173

DO - 10.4028/0-87849-410-3.173

M3 - 文章

AN - SCOPUS:33947217348

SN - 1013-9826

VL - 336-338 I

SP - 173

EP - 176

JO - Key Engineering Materials

JF - Key Engineering Materials

ER -

Epitaxial growth and electrical characterization of PBZT thin films by RF magnetron sputtering deposition

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Keywords

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