Material Science
Ionic Liquid
100%
Density
67%
Silicon Dioxide
59%
Thermal Stability
43%
Surface (Surface Science)
38%
Sol-Gel
37%
Film
31%
High Energy Density
18%
Oxide Compound
18%
Impact Resistance
18%
Hydrogen Bonding
17%
Nuclear Magnetic Resonance
17%
Crystal Structure
17%
HMX
15%
Hydrogen Peroxide
15%
X-Ray Diffraction
13%
Carbon Dioxide
13%
Metal-Organic Framework
13%
Self Assembly
12%
Potassium
12%
Solid Propellant
12%
Optical Property
12%
Molecular Structure
10%
Thin Films
9%
Oxidant
9%
Energy Materials
9%
Surface Roughness
9%
Refractive Index
9%
Composite Material
9%
Polishing
8%
Single Crystal X-Ray Diffraction
8%
Catalysis
8%
Hydrophobicity
7%
Enzymatic Hydrolysis
7%
Contact Angle
7%
Liquid Fuels
7%
Elemental Analysis
6%
Point Defect
6%
Aluminum Oxide
6%
Tetraethyl Orthosilicate
6%
Scanning Electron Microscopy
5%
Crystal Engineering
5%
Laser Pulse
5%
Machining
5%
Polysiloxane
5%
Diamond
5%
Thermogravimetric Analysis
5%
Water Vapor
5%
Wet Etching
5%
Chemistry
Energetics
97%
Ionic Liquid
39%
Thermal Stability
24%
Heterocyclic Compound
13%
stability
13%
Enthalpy of Formation
12%
Hydrogen Bonding
10%
Thr-Asp
10%
NMR Spectroscopy
10%
Carbonylation
9%
melt
8%
Decomposition Temperature
8%
Elemental Analysis
8%
Single-Crystal X-Ray Crystallography
8%
Pyrazine
8%
Toxic
7%
Rocket Fuel
7%
Nitramine
6%
Pyridazine
6%
Metal Organic Framework
6%
Crystal Structure
6%
Azide
6%
Deuterium
6%
X-Ray Diffraction
6%
Carbamate
6%
Hydrogen Peroxide
5%
1,2,3-triazine
5%
Differential Scanning Calorimetry
5%
Picric Acid
5%
CL-20
5%
Engineering
Induced Damage
39%
Yield Point
33%
Silicon Dioxide
22%
Fused Silica
17%
Power Laser
16%
Laser System
16%
Ignition
13%
Ignition Delay
12%
Delay Time
11%
Nanosecond
11%
Atomic Layer Deposition
11%
Larger Aperture
10%
Thin Films
10%
Frequency Error
9%
Experimental Result
9%
Oxidizer
9%
Grinding (Machining)
8%
Sol-Gel Process
7%
Sio2 Film
7%
Spatial Frequency
7%
Laser Irradiation
7%
Energetics
7%
Material Removal
6%
Borohydride
6%
Femtosecond Laser
6%
Optical Surface
5%
Damage Surface
5%
Form Error
5%
Polishing Process
5%
Dihydrogen Ammonium Phosphate
5%
