Thermoelectric properties of n-type transition metal-doped PbSe

X. Wang, X. Li, Z. Zhang, C. Chen, S. Li, X. Lin, J. Sui, X. Liu, F. Cao, J. Yang, Q. Zhang

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27 引用 (Scopus)

摘要

Thermoelectric properties of transition metal (Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, or W)-doped PbSe were studied. Peak ZT∼1.1, ∼1.15, and ∼1.2 at about 873 K has been achieved in Ti0.015Pb0.985Se, Zr0.005Pb0.995Se, and Nb0.01Pb0.99Se, respectively, with increased room temperature Hall carrier concentration to ∼1019–1020 cm−3. However, the lower temperature ZT (<600 K) is not favorable compared with other transition metal (V, Cr, Mo, or W)-doped PbSe with lower doping concentration. Higher room temperature ZT contributes to the higher average ZT despite lower peak ZT. First-principles calculation found resonant states created in n-type PbSe doped by Ti, V, Zr, Nb, Mo, Hf, Ta, or W similar to Cr-doped PbSe, while Pisarenko plots show absence of resonant states due to the deep residence of the states and the limited doping concentration confirmed by the calculations.

源语言英语
页(从-至)45-52
页数8
期刊Materials Today Physics
6
DOI
出版状态已出版 - 8月 2018
已对外发布

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