Thermoelectric properties of n-type transition metal-doped PbSe

X. Wang; X. Li; Z. Zhang; C. Chen; S. Li; X. Lin; J. Sui; X. Liu; F. Cao; J. Yang; Q. Zhang

doi:10.1016/j.mtphys.2018.06.004

Thermoelectric properties of n-type transition metal-doped PbSe

X. Wang, X. Li, Z. Zhang, C. Chen, S. Li, X. Lin, J. Sui, X. Liu, F. Cao, J. Yang, Q. Zhang

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Thermoelectric properties of transition metal (Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, or W)-doped PbSe were studied. Peak ZT∼1.1, ∼1.15, and ∼1.2 at about 873 K has been achieved in Ti_0.015Pb_0.985Se, Zr_0.005Pb_0.995Se, and Nb_0.01Pb_0.99Se, respectively, with increased room temperature Hall carrier concentration to ∼10¹⁹–10²⁰ cm⁻³. However, the lower temperature ZT (<600 K) is not favorable compared with other transition metal (V, Cr, Mo, or W)-doped PbSe with lower doping concentration. Higher room temperature ZT contributes to the higher average ZT despite lower peak ZT. First-principles calculation found resonant states created in n-type PbSe doped by Ti, V, Zr, Nb, Mo, Hf, Ta, or W similar to Cr-doped PbSe, while Pisarenko plots show absence of resonant states due to the deep residence of the states and the limited doping concentration confirmed by the calculations.

Original language	English
Pages (from-to)	45-52
Number of pages	8
Journal	Materials Today Physics
Volume	6
DOIs	https://doi.org/10.1016/j.mtphys.2018.06.004
State	Published - Aug 2018
Externally published	Yes

Keywords

Average ZT
First-principles calculation
Thermoelectric
Transition metal

Access to Document

10.1016/j.mtphys.2018.06.004

Cite this

@article{26ef5a2cc6b5456fadb3ed222049319e,

title = "Thermoelectric properties of n-type transition metal-doped PbSe",

abstract = "Thermoelectric properties of transition metal (Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, or W)-doped PbSe were studied. Peak ZT∼1.1, ∼1.15, and ∼1.2 at about 873 K has been achieved in Ti0.015Pb0.985Se, Zr0.005Pb0.995Se, and Nb0.01Pb0.99Se, respectively, with increased room temperature Hall carrier concentration to ∼1019–1020 cm−3. However, the lower temperature ZT (<600 K) is not favorable compared with other transition metal (V, Cr, Mo, or W)-doped PbSe with lower doping concentration. Higher room temperature ZT contributes to the higher average ZT despite lower peak ZT. First-principles calculation found resonant states created in n-type PbSe doped by Ti, V, Zr, Nb, Mo, Hf, Ta, or W similar to Cr-doped PbSe, while Pisarenko plots show absence of resonant states due to the deep residence of the states and the limited doping concentration confirmed by the calculations.",

keywords = "Average ZT, First-principles calculation, Thermoelectric, Transition metal",

author = "X. Wang and X. Li and Z. Zhang and C. Chen and S. Li and X. Lin and J. Sui and X. Liu and F. Cao and J. Yang and Q. Zhang",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

month = aug,

doi = "10.1016/j.mtphys.2018.06.004",

language = "英语",

volume = "6",

pages = "45--52",

journal = "Materials Today Physics",

issn = "2542-5293",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Thermoelectric properties of n-type transition metal-doped PbSe

AU - Wang, X.

AU - Li, X.

AU - Zhang, Z.

AU - Chen, C.

AU - Li, S.

AU - Lin, X.

AU - Sui, J.

AU - Liu, X.

AU - Cao, F.

AU - Yang, J.

AU - Zhang, Q.

PY - 2018/8

Y1 - 2018/8

N2 - Thermoelectric properties of transition metal (Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, or W)-doped PbSe were studied. Peak ZT∼1.1, ∼1.15, and ∼1.2 at about 873 K has been achieved in Ti0.015Pb0.985Se, Zr0.005Pb0.995Se, and Nb0.01Pb0.99Se, respectively, with increased room temperature Hall carrier concentration to ∼1019–1020 cm−3. However, the lower temperature ZT (<600 K) is not favorable compared with other transition metal (V, Cr, Mo, or W)-doped PbSe with lower doping concentration. Higher room temperature ZT contributes to the higher average ZT despite lower peak ZT. First-principles calculation found resonant states created in n-type PbSe doped by Ti, V, Zr, Nb, Mo, Hf, Ta, or W similar to Cr-doped PbSe, while Pisarenko plots show absence of resonant states due to the deep residence of the states and the limited doping concentration confirmed by the calculations.

AB - Thermoelectric properties of transition metal (Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, or W)-doped PbSe were studied. Peak ZT∼1.1, ∼1.15, and ∼1.2 at about 873 K has been achieved in Ti0.015Pb0.985Se, Zr0.005Pb0.995Se, and Nb0.01Pb0.99Se, respectively, with increased room temperature Hall carrier concentration to ∼1019–1020 cm−3. However, the lower temperature ZT (<600 K) is not favorable compared with other transition metal (V, Cr, Mo, or W)-doped PbSe with lower doping concentration. Higher room temperature ZT contributes to the higher average ZT despite lower peak ZT. First-principles calculation found resonant states created in n-type PbSe doped by Ti, V, Zr, Nb, Mo, Hf, Ta, or W similar to Cr-doped PbSe, while Pisarenko plots show absence of resonant states due to the deep residence of the states and the limited doping concentration confirmed by the calculations.

KW - Average ZT

KW - First-principles calculation

KW - Thermoelectric

KW - Transition metal

UR - http://www.scopus.com/inward/record.url?scp=85058003639&partnerID=8YFLogxK

U2 - 10.1016/j.mtphys.2018.06.004

DO - 10.1016/j.mtphys.2018.06.004

M3 - 文章

AN - SCOPUS:85058003639

SN - 2542-5293

VL - 6

SP - 45

EP - 52

JO - Materials Today Physics

JF - Materials Today Physics

ER -

Thermoelectric properties of n-type transition metal-doped PbSe

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this