The study on Schottky contact between Au and clean CdZnTe

Gangqiang Zha; Wanqi Jie; Dongmei Zeng; Yadong Xu; Wenhua Zhang; Faqiang Xu

doi:10.1016/j.susc.2006.04.033

The study on Schottky contact between Au and clean CdZnTe

Gangqiang Zha, Wanqi Jie, Dongmei Zeng, Yadong Xu, Wenhua Zhang, Faqiang Xu

材料学院

科研成果: 期刊稿件 › 文章 › 同行评审

11 引用（Scopus）

摘要

Au Schottky contact was deposited on the clean CZT (1 1 0) and (1 1 1) A surface by molecular beam epitaxy (MBE). The real Schottky barrier heights were measured to be 0.738 eV and 0.566 eV by Synchrotron radiation photoemission spectroscopy (SRPES) respectively. The constituents of (1 1 0) and (1 1 1) A surfaces were measured by XPS. The Te concentration on (1 1 1) A surface is higher than that of (1 1 0) surface. And the difference of chemical reactivity and charge transfer were identified by Au 4f_7/2, Cd 4d, Te 4d_5/2 core level shifts using SRPES. Using metal-induced gap states model, the results of experiment were explained.

源语言	英语
页（从-至）	2629-2632
页数	4
期刊	Surface Science
卷	600
期	12
DOI	https://doi.org/10.1016/j.susc.2006.04.033
出版状态	已出版 - 15 6月 2006

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10.1016/j.susc.2006.04.033

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title = "The study on Schottky contact between Au and clean CdZnTe",

abstract = "Au Schottky contact was deposited on the clean CZT (1 1 0) and (1 1 1) A surface by molecular beam epitaxy (MBE). The real Schottky barrier heights were measured to be 0.738 eV and 0.566 eV by Synchrotron radiation photoemission spectroscopy (SRPES) respectively. The constituents of (1 1 0) and (1 1 1) A surfaces were measured by XPS. The Te concentration on (1 1 1) A surface is higher than that of (1 1 0) surface. And the difference of chemical reactivity and charge transfer were identified by Au 4f7/2, Cd 4d, Te 4d5/2 core level shifts using SRPES. Using metal-induced gap states model, the results of experiment were explained.",

keywords = "CdZnTe, LEED, Metal-induced gap states, Schottky contact, SRPES, XPS",

author = "Gangqiang Zha and Wanqi Jie and Dongmei Zeng and Yadong Xu and Wenhua Zhang and Faqiang Xu",

year = "2006",

month = jun,

day = "15",

doi = "10.1016/j.susc.2006.04.033",

language = "英语",

volume = "600",

pages = "2629--2632",

journal = "Surface Science",

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TY - JOUR

T1 - The study on Schottky contact between Au and clean CdZnTe

AU - Zha, Gangqiang

AU - Jie, Wanqi

AU - Zeng, Dongmei

AU - Xu, Yadong

AU - Zhang, Wenhua

AU - Xu, Faqiang

PY - 2006/6/15

Y1 - 2006/6/15

N2 - Au Schottky contact was deposited on the clean CZT (1 1 0) and (1 1 1) A surface by molecular beam epitaxy (MBE). The real Schottky barrier heights were measured to be 0.738 eV and 0.566 eV by Synchrotron radiation photoemission spectroscopy (SRPES) respectively. The constituents of (1 1 0) and (1 1 1) A surfaces were measured by XPS. The Te concentration on (1 1 1) A surface is higher than that of (1 1 0) surface. And the difference of chemical reactivity and charge transfer were identified by Au 4f7/2, Cd 4d, Te 4d5/2 core level shifts using SRPES. Using metal-induced gap states model, the results of experiment were explained.

AB - Au Schottky contact was deposited on the clean CZT (1 1 0) and (1 1 1) A surface by molecular beam epitaxy (MBE). The real Schottky barrier heights were measured to be 0.738 eV and 0.566 eV by Synchrotron radiation photoemission spectroscopy (SRPES) respectively. The constituents of (1 1 0) and (1 1 1) A surfaces were measured by XPS. The Te concentration on (1 1 1) A surface is higher than that of (1 1 0) surface. And the difference of chemical reactivity and charge transfer were identified by Au 4f7/2, Cd 4d, Te 4d5/2 core level shifts using SRPES. Using metal-induced gap states model, the results of experiment were explained.

KW - CdZnTe

KW - LEED

KW - Metal-induced gap states

KW - Schottky contact

KW - SRPES

KW - XPS

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U2 - 10.1016/j.susc.2006.04.033

DO - 10.1016/j.susc.2006.04.033

M3 - 文章

AN - SCOPUS:33745008676

SN - 0039-6028

VL - 600

SP - 2629

EP - 2632

JO - Surface Science

JF - Surface Science

IS - 12

ER -

The study on Schottky contact between Au and clean CdZnTe

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