The study on Schottky contact between Au and clean CdZnTe

Gangqiang Zha, Wanqi Jie, Dongmei Zeng, Yadong Xu, Wenhua Zhang, Faqiang Xu

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11 Scopus citations

Abstract

Au Schottky contact was deposited on the clean CZT (1 1 0) and (1 1 1) A surface by molecular beam epitaxy (MBE). The real Schottky barrier heights were measured to be 0.738 eV and 0.566 eV by Synchrotron radiation photoemission spectroscopy (SRPES) respectively. The constituents of (1 1 0) and (1 1 1) A surfaces were measured by XPS. The Te concentration on (1 1 1) A surface is higher than that of (1 1 0) surface. And the difference of chemical reactivity and charge transfer were identified by Au 4f7/2, Cd 4d, Te 4d5/2 core level shifts using SRPES. Using metal-induced gap states model, the results of experiment were explained.

Original languageEnglish
Pages (from-to)2629-2632
Number of pages4
JournalSurface Science
Volume600
Issue number12
DOIs
StatePublished - 15 Jun 2006

Keywords

  • CdZnTe
  • LEED
  • Metal-induced gap states
  • Schottky contact
  • SRPES
  • XPS

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