摘要
Using CH3SiCl3 (MTS) and H2 as the precursors, large quantities of SiC nanowires with homogeneous diameter have been fabricated by a simple chemical vapor deposition process without using a metallic catalyst. The as-grown SiC nanowires were identified by TEM and XRD as single crystal β-SiC structure, with diameters of about 70 nm. As the increasing of deposition temperature, or as the decreasing of H2/MTS mol ratio, the SiC crystal dimensions increase and the morphologies of the as-grown SiC crystal change from nanowires to grains. β-SiC coaxial nanocables with a amorphous wrapping layer have also been obtained by the oxidation of SiC nanowires.
源语言 | 英语 |
---|---|
页(从-至) | 108-111 |
页数 | 4 |
期刊 | Materials Chemistry and Physics |
卷 | 100 |
期 | 1 |
DOI | |
出版状态 | 已出版 - 10 11月 2006 |