Synthesis of silicon carbide nanowires by CVD without using a metallic catalyst

Qian Gang Fu, He Jun Li, Xiao Hong Shi, Ke Zhi Li, Jian Wei, Zhi Biao Hu

Research output: Contribution to journalArticlepeer-review

100 Scopus citations

Abstract

Using CH3SiCl3 (MTS) and H2 as the precursors, large quantities of SiC nanowires with homogeneous diameter have been fabricated by a simple chemical vapor deposition process without using a metallic catalyst. The as-grown SiC nanowires were identified by TEM and XRD as single crystal β-SiC structure, with diameters of about 70 nm. As the increasing of deposition temperature, or as the decreasing of H2/MTS mol ratio, the SiC crystal dimensions increase and the morphologies of the as-grown SiC crystal change from nanowires to grains. β-SiC coaxial nanocables with a amorphous wrapping layer have also been obtained by the oxidation of SiC nanowires.

Original languageEnglish
Pages (from-to)108-111
Number of pages4
JournalMaterials Chemistry and Physics
Volume100
Issue number1
DOIs
StatePublished - 10 Nov 2006

Keywords

  • Chemical vapor deposition (CVD)
  • Crystal growth
  • Nanostructure

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