Study on negative thermal quenching of PL in CdZnTe crystal

科研成果: 期刊稿件文章同行评审

2 引用 (Scopus)

摘要

Photoluminescence (PL) spectroscopy was carried out on CdZnTe crystal grown by Modified Vertical Bridgman method, with temperature from 10 K to 150 K. Abnormal temperature dependent PL intensity were observed from 30 K to 50 K, which is the so-called "negative thermal quenching". Three non-radiative processes and one negative thermal quenching process were identified. The difference of XRD spectra between CdZnTe crystals with and without negative thermal quenching behaviors gives a possible explanation on its origin.

源语言英语
页(从-至)106-109
页数4
期刊Rengong Jingti Xuebao/Journal of Synthetic Crystals
39
1
出版状态已出版 - 2月 2010

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