摘要
Photoluminescence (PL) spectroscopy was carried out on CdZnTe crystal grown by Modified Vertical Bridgman method, with temperature from 10 K to 150 K. Abnormal temperature dependent PL intensity were observed from 30 K to 50 K, which is the so-called "negative thermal quenching". Three non-radiative processes and one negative thermal quenching process were identified. The difference of XRD spectra between CdZnTe crystals with and without negative thermal quenching behaviors gives a possible explanation on its origin.
源语言 | 英语 |
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页(从-至) | 106-109 |
页数 | 4 |
期刊 | Rengong Jingti Xuebao/Journal of Synthetic Crystals |
卷 | 39 |
期 | 1 |
出版状态 | 已出版 - 2月 2010 |