Study on negative thermal quenching of PL in CdZnTe crystal

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Abstract

Photoluminescence (PL) spectroscopy was carried out on CdZnTe crystal grown by Modified Vertical Bridgman method, with temperature from 10 K to 150 K. Abnormal temperature dependent PL intensity were observed from 30 K to 50 K, which is the so-called "negative thermal quenching". Three non-radiative processes and one negative thermal quenching process were identified. The difference of XRD spectra between CdZnTe crystals with and without negative thermal quenching behaviors gives a possible explanation on its origin.

Original languageEnglish
Pages (from-to)106-109
Number of pages4
JournalRengong Jingti Xuebao/Journal of Synthetic Crystals
Volume39
Issue number1
StatePublished - Feb 2010

Keywords

  • CdZnTe
  • Negative thermal quenching
  • PL spectroscopy

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