SiC nanowire networks

Novel 2-D semiconductor SiC nanonetworks have been synthesized at relatively low-temperature via a new method (chemical vapor reaction approach) in a homemade graphite reaction cell. The mixture of milled Si and SiC powder and C₃H₆ were chosen as the starting materials. EDX, XRD and HRTEM indicated that the nanonetworks are formed by interconnecting nanowires. The nanowires with diameter of about 20-70 nm are single crystalline β-SiC and the growth direction is along [1 1 1]. A growth mechanism of β-SiC nanowire networks is discussed.