SiC nanowire networks

H. J. Li; Z. J. Li; A. L. Meng; K. Z. Li; X. N. Zhang; Y. P. Xu

doi:10.1016/S0925-8388(02)01111-8

SiC nanowire networks

H. J. Li, Z. J. Li, A. L. Meng, K. Z. Li, X. N. Zhang, Y. P. Xu

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

Novel 2-D semiconductor SiC nanonetworks have been synthesized at relatively low-temperature via a new method (chemical vapor reaction approach) in a homemade graphite reaction cell. The mixture of milled Si and SiC powder and C₃H₆ were chosen as the starting materials. EDX, XRD and HRTEM indicated that the nanonetworks are formed by interconnecting nanowires. The nanowires with diameter of about 20-70 nm are single crystalline β-SiC and the growth direction is along [1 1 1]. A growth mechanism of β-SiC nanowire networks is discussed.

Original language	English
Pages (from-to)	279-282
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	352
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-8388(02)01111-8
State	Published - 24 Mar 2003

Keywords

Microstructure
Nanofabrication
SEM
Semiconductors
TEM

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10.1016/S0925-8388(02)01111-8

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title = "SiC nanowire networks",

abstract = "Novel 2-D semiconductor SiC nanonetworks have been synthesized at relatively low-temperature via a new method (chemical vapor reaction approach) in a homemade graphite reaction cell. The mixture of milled Si and SiC powder and C3H6 were chosen as the starting materials. EDX, XRD and HRTEM indicated that the nanonetworks are formed by interconnecting nanowires. The nanowires with diameter of about 20-70 nm are single crystalline β-SiC and the growth direction is along [1 1 1]. A growth mechanism of β-SiC nanowire networks is discussed.",

keywords = "Microstructure, Nanofabrication, SEM, Semiconductors, TEM",

author = "Li, {H. J.} and Li, {Z. J.} and Meng, {A. L.} and Li, {K. Z.} and Zhang, {X. N.} and Xu, {Y. P.}",

year = "2003",

month = mar,

day = "24",

doi = "10.1016/S0925-8388(02)01111-8",

language = "英语",

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pages = "279--282",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - SiC nanowire networks

AU - Li, H. J.

AU - Li, Z. J.

AU - Meng, A. L.

AU - Li, K. Z.

AU - Zhang, X. N.

AU - Xu, Y. P.

PY - 2003/3/24

Y1 - 2003/3/24

N2 - Novel 2-D semiconductor SiC nanonetworks have been synthesized at relatively low-temperature via a new method (chemical vapor reaction approach) in a homemade graphite reaction cell. The mixture of milled Si and SiC powder and C3H6 were chosen as the starting materials. EDX, XRD and HRTEM indicated that the nanonetworks are formed by interconnecting nanowires. The nanowires with diameter of about 20-70 nm are single crystalline β-SiC and the growth direction is along [1 1 1]. A growth mechanism of β-SiC nanowire networks is discussed.

AB - Novel 2-D semiconductor SiC nanonetworks have been synthesized at relatively low-temperature via a new method (chemical vapor reaction approach) in a homemade graphite reaction cell. The mixture of milled Si and SiC powder and C3H6 were chosen as the starting materials. EDX, XRD and HRTEM indicated that the nanonetworks are formed by interconnecting nanowires. The nanowires with diameter of about 20-70 nm are single crystalline β-SiC and the growth direction is along [1 1 1]. A growth mechanism of β-SiC nanowire networks is discussed.

KW - Microstructure

KW - Nanofabrication

KW - SEM

KW - Semiconductors

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=0037463978&partnerID=8YFLogxK

U2 - 10.1016/S0925-8388(02)01111-8

DO - 10.1016/S0925-8388(02)01111-8

M3 - 文章

AN - SCOPUS:0037463978

SN - 0925-8388

VL - 352

SP - 279

EP - 282

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

SiC nanowire networks

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Keywords

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