Investigation on interface barrier of Au-CdZnTe contacts

Qiang Li; Wanqi Jie; Li Fu; Gangqiang Zha

doi:10.1016/j.nima.2006.03.026

Investigation on interface barrier of Au-CdZnTe contacts

Qiang Li, Wanqi Jie, Li Fu, Gangqiang Zha

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

8 引用（Scopus）

摘要

The interface barrier between Au contact and p-CdZnTe was studied by synchrotron-based X-ray photoemission spectroscopy (SXPS), where the interface barrier was determined by the discrepancy between E_V-C deduced by the Cd 4d core level with valence band region and E_B deduced by the Cd 4d core level with the Fermi edge. The interface barrier height was determined to be 0.88±0.02 eV for Au-CdZnTe without passivation and 1.17±0.02 eV for Au-CdZnTe after passivation. Schottky barrier height was 0.85±0.02 eV without passivation and 0.96±0.02 eV with passivation by current-voltage method. However, 1.39±0.02 eV without passivation and 1.51±0.02 eV with passivation were measured according to the capacitance-voltage method.

源语言	英语
页（从-至）	544-548
页数	5
期刊	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
卷	564
期	1
DOI	https://doi.org/10.1016/j.nima.2006.03.026
出版状态	已出版 - 1 8月 2006

访问文件

10.1016/j.nima.2006.03.026

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{89a5b931892440f58a0bd4c4848d80b5,

title = "Investigation on interface barrier of Au-CdZnTe contacts",

abstract = "The interface barrier between Au contact and p-CdZnTe was studied by synchrotron-based X-ray photoemission spectroscopy (SXPS), where the interface barrier was determined by the discrepancy between EV-C deduced by the Cd 4d core level with valence band region and EB deduced by the Cd 4d core level with the Fermi edge. The interface barrier height was determined to be 0.88±0.02 eV for Au-CdZnTe without passivation and 1.17±0.02 eV for Au-CdZnTe after passivation. Schottky barrier height was 0.85±0.02 eV without passivation and 0.96±0.02 eV with passivation by current-voltage method. However, 1.39±0.02 eV without passivation and 1.51±0.02 eV with passivation were measured according to the capacitance-voltage method.",

keywords = "CdZnTe, Electrical property, SXPS",

author = "Qiang Li and Wanqi Jie and Li Fu and Gangqiang Zha",

year = "2006",

month = aug,

day = "1",

doi = "10.1016/j.nima.2006.03.026",

language = "英语",

volume = "564",

pages = "544--548",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Investigation on interface barrier of Au-CdZnTe contacts

AU - Li, Qiang

AU - Jie, Wanqi

AU - Fu, Li

AU - Zha, Gangqiang

PY - 2006/8/1

Y1 - 2006/8/1

N2 - The interface barrier between Au contact and p-CdZnTe was studied by synchrotron-based X-ray photoemission spectroscopy (SXPS), where the interface barrier was determined by the discrepancy between EV-C deduced by the Cd 4d core level with valence band region and EB deduced by the Cd 4d core level with the Fermi edge. The interface barrier height was determined to be 0.88±0.02 eV for Au-CdZnTe without passivation and 1.17±0.02 eV for Au-CdZnTe after passivation. Schottky barrier height was 0.85±0.02 eV without passivation and 0.96±0.02 eV with passivation by current-voltage method. However, 1.39±0.02 eV without passivation and 1.51±0.02 eV with passivation were measured according to the capacitance-voltage method.

AB - The interface barrier between Au contact and p-CdZnTe was studied by synchrotron-based X-ray photoemission spectroscopy (SXPS), where the interface barrier was determined by the discrepancy between EV-C deduced by the Cd 4d core level with valence band region and EB deduced by the Cd 4d core level with the Fermi edge. The interface barrier height was determined to be 0.88±0.02 eV for Au-CdZnTe without passivation and 1.17±0.02 eV for Au-CdZnTe after passivation. Schottky barrier height was 0.85±0.02 eV without passivation and 0.96±0.02 eV with passivation by current-voltage method. However, 1.39±0.02 eV without passivation and 1.51±0.02 eV with passivation were measured according to the capacitance-voltage method.

KW - CdZnTe

KW - Electrical property

KW - SXPS

UR - http://www.scopus.com/inward/record.url?scp=33746264910&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2006.03.026

DO - 10.1016/j.nima.2006.03.026

M3 - 文章

AN - SCOPUS:33746264910

SN - 0168-9002

VL - 564

SP - 544

EP - 548

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1

ER -

Investigation on interface barrier of Au-CdZnTe contacts

摘要

访问文件

其它文件与链接

指纹

引用此