Investigation on interface barrier of Au-CdZnTe contacts

Qiang Li; Wanqi Jie; Li Fu; Gangqiang Zha

doi:10.1016/j.nima.2006.03.026

Investigation on interface barrier of Au-CdZnTe contacts

Qiang Li, Wanqi Jie, Li Fu, Gangqiang Zha

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The interface barrier between Au contact and p-CdZnTe was studied by synchrotron-based X-ray photoemission spectroscopy (SXPS), where the interface barrier was determined by the discrepancy between E_V-C deduced by the Cd 4d core level with valence band region and E_B deduced by the Cd 4d core level with the Fermi edge. The interface barrier height was determined to be 0.88±0.02 eV for Au-CdZnTe without passivation and 1.17±0.02 eV for Au-CdZnTe after passivation. Schottky barrier height was 0.85±0.02 eV without passivation and 0.96±0.02 eV with passivation by current-voltage method. However, 1.39±0.02 eV without passivation and 1.51±0.02 eV with passivation were measured according to the capacitance-voltage method.

Original language	English
Pages (from-to)	544-548
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	564
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2006.03.026
State	Published - 1 Aug 2006

Keywords

CdZnTe
Electrical property
SXPS

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10.1016/j.nima.2006.03.026

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title = "Investigation on interface barrier of Au-CdZnTe contacts",

abstract = "The interface barrier between Au contact and p-CdZnTe was studied by synchrotron-based X-ray photoemission spectroscopy (SXPS), where the interface barrier was determined by the discrepancy between EV-C deduced by the Cd 4d core level with valence band region and EB deduced by the Cd 4d core level with the Fermi edge. The interface barrier height was determined to be 0.88±0.02 eV for Au-CdZnTe without passivation and 1.17±0.02 eV for Au-CdZnTe after passivation. Schottky barrier height was 0.85±0.02 eV without passivation and 0.96±0.02 eV with passivation by current-voltage method. However, 1.39±0.02 eV without passivation and 1.51±0.02 eV with passivation were measured according to the capacitance-voltage method.",

keywords = "CdZnTe, Electrical property, SXPS",

author = "Qiang Li and Wanqi Jie and Li Fu and Gangqiang Zha",

year = "2006",

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doi = "10.1016/j.nima.2006.03.026",

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TY - JOUR

T1 - Investigation on interface barrier of Au-CdZnTe contacts

AU - Li, Qiang

AU - Jie, Wanqi

AU - Fu, Li

AU - Zha, Gangqiang

PY - 2006/8/1

Y1 - 2006/8/1

N2 - The interface barrier between Au contact and p-CdZnTe was studied by synchrotron-based X-ray photoemission spectroscopy (SXPS), where the interface barrier was determined by the discrepancy between EV-C deduced by the Cd 4d core level with valence band region and EB deduced by the Cd 4d core level with the Fermi edge. The interface barrier height was determined to be 0.88±0.02 eV for Au-CdZnTe without passivation and 1.17±0.02 eV for Au-CdZnTe after passivation. Schottky barrier height was 0.85±0.02 eV without passivation and 0.96±0.02 eV with passivation by current-voltage method. However, 1.39±0.02 eV without passivation and 1.51±0.02 eV with passivation were measured according to the capacitance-voltage method.

AB - The interface barrier between Au contact and p-CdZnTe was studied by synchrotron-based X-ray photoemission spectroscopy (SXPS), where the interface barrier was determined by the discrepancy between EV-C deduced by the Cd 4d core level with valence band region and EB deduced by the Cd 4d core level with the Fermi edge. The interface barrier height was determined to be 0.88±0.02 eV for Au-CdZnTe without passivation and 1.17±0.02 eV for Au-CdZnTe after passivation. Schottky barrier height was 0.85±0.02 eV without passivation and 0.96±0.02 eV with passivation by current-voltage method. However, 1.39±0.02 eV without passivation and 1.51±0.02 eV with passivation were measured according to the capacitance-voltage method.

KW - CdZnTe

KW - Electrical property

KW - SXPS

UR - http://www.scopus.com/inward/record.url?scp=33746264910&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2006.03.026

DO - 10.1016/j.nima.2006.03.026

M3 - 文章

AN - SCOPUS:33746264910

SN - 0168-9002

VL - 564

SP - 544

EP - 548

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1

ER -

Investigation on interface barrier of Au-CdZnTe contacts

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