@inproceedings{a75b4f8c69c545b19147b0e5e6dabaf0,
title = "Growth of GaAsP by solid source molecular beam epitaxy",
abstract = "The GaAsP crystal material grown on GaAs substrate has been extensive applications in the area of photoelectronic device. There because GaAsP have advantageous photoelectronic performance and adjustable band gap. We report growth of GaAs1-xPx grown on GaAs substrate by solid source molecular beam epitaxy (SSMBE). On the basis of the optimized V/III flux ratio, appropriate growth rate, and the substrate temperature for sample growth, different composition GaAs1-xPx layers had been grown on GaAs top. Lattice-mismatched became the big challenges to high-quality epitaxial growth of the GaAs1-x Px materials on GaAs substrate. The crystalline quality, surface morphology were performed by applying high resolution X-ray diffractometry (HRXRD) and high resolution optical microscopy. The etched region and internal defect were also investigated.",
keywords = "Crystalline quality, GaAsP, Lattice-mismatch, MBE, Surface morphology",
author = "Jiao, {Gang Cheng} and Liu, {Zheng Tang} and Feng Shi and Zhang, {Lian Dong} and Wei Cheng and Wang, {Shu Fei} and Zhou, {Yu Jian} and Zhuang Miao",
year = "2013",
doi = "10.4028/www.scientific.net/KEM.531-532.159",
language = "英语",
isbn = "9783037855256",
series = "Key Engineering Materials",
publisher = "Trans Tech Publications Ltd",
pages = "159--162",
booktitle = "Materials Science and Nanotechnology",
note = "2012 International Conference on Materials Science and Nanotechnology, ICMSN 2012 ; Conference date: 16-11-2012 Through 18-11-2012",
}