Growth of GaAsP by solid source molecular beam epitaxy

Gang Cheng Jiao, Zheng Tang Liu, Feng Shi, Lian Dong Zhang, Wei Cheng, Shu Fei Wang, Yu Jian Zhou, Zhuang Miao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The GaAsP crystal material grown on GaAs substrate has been extensive applications in the area of photoelectronic device. There because GaAsP have advantageous photoelectronic performance and adjustable band gap. We report growth of GaAs1-xPx grown on GaAs substrate by solid source molecular beam epitaxy (SSMBE). On the basis of the optimized V/III flux ratio, appropriate growth rate, and the substrate temperature for sample growth, different composition GaAs1-xPx layers had been grown on GaAs top. Lattice-mismatched became the big challenges to high-quality epitaxial growth of the GaAs1-x Px materials on GaAs substrate. The crystalline quality, surface morphology were performed by applying high resolution X-ray diffractometry (HRXRD) and high resolution optical microscopy. The etched region and internal defect were also investigated.

Original languageEnglish
Title of host publicationMaterials Science and Nanotechnology
PublisherTrans Tech Publications Ltd
Pages159-162
Number of pages4
ISBN (Print)9783037855256
DOIs
StatePublished - 2013
Event2012 International Conference on Materials Science and Nanotechnology, ICMSN 2012 - Guangzhou, China
Duration: 16 Nov 201218 Nov 2012

Publication series

NameKey Engineering Materials
Volume531-532
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Conference

Conference2012 International Conference on Materials Science and Nanotechnology, ICMSN 2012
Country/TerritoryChina
CityGuangzhou
Period16/11/1218/11/12

Keywords

  • Crystalline quality
  • GaAsP
  • Lattice-mismatch
  • MBE
  • Surface morphology

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