Growth and characterizations of ZnSe film by chemical activated hot wall epitaxy

A modified chemical activated hot wall epitaxy method was used to grow ZnSe films on Si (111) substrates using Zn and Se sources. The compound Zn(NH₄)₃Cl₅, as the chemical activated agent, was revealed to promote the growth of ZnSe with the stoichiometric composition by avoiding the kinetics limitation of the congruent sublimation conditions. The ZnSe films were characterized by SEM, EDS and PL spectra for their morphologies, composition and luminescence properties. The results indicate that the chemical activated hot wall epitaxy method is a satisfactory way to grow ZnSe films. The hot wall temperature and the deposition time were the key factors to influence the morphology of ZnSe films.