Growth and characterizations of ZnSe film by chemical activated hot wall epitaxy

Da Wei Bai; Huan Yong Li; Wan Qi Jie; Pei Sen Li; Hai Tao Zhao

Growth and characterizations of ZnSe film by chemical activated hot wall epitaxy

Da Wei Bai, Huan Yong Li, Wan Qi Jie, Pei Sen Li, Hai Tao Zhao

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A modified chemical activated hot wall epitaxy method was used to grow ZnSe films on Si (111) substrates using Zn and Se sources. The compound Zn(NH₄)₃Cl₅, as the chemical activated agent, was revealed to promote the growth of ZnSe with the stoichiometric composition by avoiding the kinetics limitation of the congruent sublimation conditions. The ZnSe films were characterized by SEM, EDS and PL spectra for their morphologies, composition and luminescence properties. The results indicate that the chemical activated hot wall epitaxy method is a satisfactory way to grow ZnSe films. The hot wall temperature and the deposition time were the key factors to influence the morphology of ZnSe films.

Original language	English
Pages (from-to)	57-61+65
Journal	Rengong Jingti Xuebao/Journal of Synthetic Crystals
Volume	36
Issue number	1
State	Published - Feb 2007

Keywords

Chemical activated hot wall epitaxy method
II-VI compound
ZnSe film

Cite this

@article{b3243fe8a3864d8385500302b3c45be6,

title = "Growth and characterizations of ZnSe film by chemical activated hot wall epitaxy",

abstract = "A modified chemical activated hot wall epitaxy method was used to grow ZnSe films on Si (111) substrates using Zn and Se sources. The compound Zn(NH4)3Cl5, as the chemical activated agent, was revealed to promote the growth of ZnSe with the stoichiometric composition by avoiding the kinetics limitation of the congruent sublimation conditions. The ZnSe films were characterized by SEM, EDS and PL spectra for their morphologies, composition and luminescence properties. The results indicate that the chemical activated hot wall epitaxy method is a satisfactory way to grow ZnSe films. The hot wall temperature and the deposition time were the key factors to influence the morphology of ZnSe films.",

keywords = "Chemical activated hot wall epitaxy method, II-VI compound, ZnSe film",

author = "Bai, {Da Wei} and Li, {Huan Yong} and Jie, {Wan Qi} and Li, {Pei Sen} and Zhao, {Hai Tao}",

year = "2007",

month = feb,

language = "英语",

volume = "36",

pages = "57--61+65",

journal = "Rengong Jingti Xuebao/Journal of Synthetic Crystals",

issn = "1000-985X",

publisher = "Chinese Ceramic Society",

number = "1",

}

TY - JOUR

T1 - Growth and characterizations of ZnSe film by chemical activated hot wall epitaxy

AU - Bai, Da Wei

AU - Li, Huan Yong

AU - Jie, Wan Qi

AU - Li, Pei Sen

AU - Zhao, Hai Tao

PY - 2007/2

Y1 - 2007/2

N2 - A modified chemical activated hot wall epitaxy method was used to grow ZnSe films on Si (111) substrates using Zn and Se sources. The compound Zn(NH4)3Cl5, as the chemical activated agent, was revealed to promote the growth of ZnSe with the stoichiometric composition by avoiding the kinetics limitation of the congruent sublimation conditions. The ZnSe films were characterized by SEM, EDS and PL spectra for their morphologies, composition and luminescence properties. The results indicate that the chemical activated hot wall epitaxy method is a satisfactory way to grow ZnSe films. The hot wall temperature and the deposition time were the key factors to influence the morphology of ZnSe films.

AB - A modified chemical activated hot wall epitaxy method was used to grow ZnSe films on Si (111) substrates using Zn and Se sources. The compound Zn(NH4)3Cl5, as the chemical activated agent, was revealed to promote the growth of ZnSe with the stoichiometric composition by avoiding the kinetics limitation of the congruent sublimation conditions. The ZnSe films were characterized by SEM, EDS and PL spectra for their morphologies, composition and luminescence properties. The results indicate that the chemical activated hot wall epitaxy method is a satisfactory way to grow ZnSe films. The hot wall temperature and the deposition time were the key factors to influence the morphology of ZnSe films.

KW - Chemical activated hot wall epitaxy method

KW - II-VI compound

KW - ZnSe film

UR - http://www.scopus.com/inward/record.url?scp=34147201288&partnerID=8YFLogxK

M3 - 文章

AN - SCOPUS:34147201288

SN - 1000-985X

VL - 36

SP - 57-61+65

JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals

JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals

IS - 1

ER -

Growth and characterizations of ZnSe film by chemical activated hot wall epitaxy

Abstract

Keywords

Other files and links

Fingerprint

Cite this