摘要
We demonstrate an approach to enhance the energy storage density W of antiferroelectric film through simple altering a crystallographic orientation of the substrate. We reveal that the antiferroelectric phase stability of PbZrO3can be enhanced for the (110) or (111) SrTiO3substrate orientation, thus suppresses the antiferroelectric-ferroelectric phase transition to higher electric field with ∼120-kV/cm increment. In addition, the polarization values of these films are also favorably increased hence increases W by 5.3-J/cm3at 700-kV/cm. The observed enhancement is found to originate from a high sensitivity of phase transition to mechanical confinements due to the volume expansion at the transition.
源语言 | 英语 |
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文章编号 | 112908 |
期刊 | Applied Physics Letters |
卷 | 105 |
期 | 11 |
DOI | |
出版状态 | 已出版 - 15 9月 2014 |
已对外发布 | 是 |