Enhancement of energy storage in epitaxial PbZrO3antiferroelectric films using strain engineering

Jun Ge, Denis Remiens, Xianlin Dong, Ying Chen, Jean Costecalde, Feng Gao, Fei Cao, Genshui Wang

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103 引用 (Scopus)

摘要

We demonstrate an approach to enhance the energy storage density W of antiferroelectric film through simple altering a crystallographic orientation of the substrate. We reveal that the antiferroelectric phase stability of PbZrO3can be enhanced for the (110) or (111) SrTiO3substrate orientation, thus suppresses the antiferroelectric-ferroelectric phase transition to higher electric field with ∼120-kV/cm increment. In addition, the polarization values of these films are also favorably increased hence increases W by 5.3-J/cm3at 700-kV/cm. The observed enhancement is found to originate from a high sensitivity of phase transition to mechanical confinements due to the volume expansion at the transition.

源语言英语
文章编号112908
期刊Applied Physics Letters
105
11
DOI
出版状态已出版 - 15 9月 2014
已对外发布

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