Enhancement of energy storage in epitaxial PbZrO3antiferroelectric films using strain engineering

Jun Ge; Denis Remiens; Xianlin Dong; Ying Chen; Jean Costecalde; Feng Gao; Fei Cao; Genshui Wang

doi:10.1063/1.4896156

Enhancement of energy storage in epitaxial PbZrO₃antiferroelectric films using strain engineering

Jun Ge, Denis Remiens, Xianlin Dong, Ying Chen, Jean Costecalde, Feng Gao, Fei Cao, Genshui Wang

Research output: Contribution to journal › Article › peer-review

103 Scopus citations

Abstract

We demonstrate an approach to enhance the energy storage density W of antiferroelectric film through simple altering a crystallographic orientation of the substrate. We reveal that the antiferroelectric phase stability of PbZrO₃can be enhanced for the (110) or (111) SrTiO₃substrate orientation, thus suppresses the antiferroelectric-ferroelectric phase transition to higher electric field with ∼120-kV/cm increment. In addition, the polarization values of these films are also favorably increased hence increases W by 5.3-J/cm³at 700-kV/cm. The observed enhancement is found to originate from a high sensitivity of phase transition to mechanical confinements due to the volume expansion at the transition.

Original language	English
Article number	112908
Journal	Applied Physics Letters
Volume	105
Issue number	11
DOIs	https://doi.org/10.1063/1.4896156
State	Published - 15 Sep 2014
Externally published	Yes

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title = "Enhancement of energy storage in epitaxial PbZrO3antiferroelectric films using strain engineering",

abstract = "We demonstrate an approach to enhance the energy storage density W of antiferroelectric film through simple altering a crystallographic orientation of the substrate. We reveal that the antiferroelectric phase stability of PbZrO3can be enhanced for the (110) or (111) SrTiO3substrate orientation, thus suppresses the antiferroelectric-ferroelectric phase transition to higher electric field with ∼120-kV/cm increment. In addition, the polarization values of these films are also favorably increased hence increases W by 5.3-J/cm3at 700-kV/cm. The observed enhancement is found to originate from a high sensitivity of phase transition to mechanical confinements due to the volume expansion at the transition.",

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T1 - Enhancement of energy storage in epitaxial PbZrO3antiferroelectric films using strain engineering

AU - Ge, Jun

AU - Remiens, Denis

AU - Dong, Xianlin

AU - Chen, Ying

AU - Costecalde, Jean

AU - Gao, Feng

AU - Cao, Fei

AU - Wang, Genshui

PY - 2014/9/15

Y1 - 2014/9/15

N2 - We demonstrate an approach to enhance the energy storage density W of antiferroelectric film through simple altering a crystallographic orientation of the substrate. We reveal that the antiferroelectric phase stability of PbZrO3can be enhanced for the (110) or (111) SrTiO3substrate orientation, thus suppresses the antiferroelectric-ferroelectric phase transition to higher electric field with ∼120-kV/cm increment. In addition, the polarization values of these films are also favorably increased hence increases W by 5.3-J/cm3at 700-kV/cm. The observed enhancement is found to originate from a high sensitivity of phase transition to mechanical confinements due to the volume expansion at the transition.

AB - We demonstrate an approach to enhance the energy storage density W of antiferroelectric film through simple altering a crystallographic orientation of the substrate. We reveal that the antiferroelectric phase stability of PbZrO3can be enhanced for the (110) or (111) SrTiO3substrate orientation, thus suppresses the antiferroelectric-ferroelectric phase transition to higher electric field with ∼120-kV/cm increment. In addition, the polarization values of these films are also favorably increased hence increases W by 5.3-J/cm3at 700-kV/cm. The observed enhancement is found to originate from a high sensitivity of phase transition to mechanical confinements due to the volume expansion at the transition.

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M3 - 文章

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JO - Applied Physics Letters

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Enhancement of energy storage in epitaxial PbZrO₃antiferroelectric films using strain engineering

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