摘要
The dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe crystal have been investigated through the defect-selective etching and cathodoluminescence (CL). The enrichment of well-arranged dislocation-related defects was found around the Te inclusions. A dislocation-mediated defects interaction model was proposed and native deep-level defects were considered to be associated with induced dislocation motions, showing as a dark CL contrast. The spatial arrangement of the microstructural defects were confined to a stellated octahedron.
源语言 | 英语 |
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页(从-至) | 17-20 |
页数 | 4 |
期刊 | Scripta Materialia |
卷 | 82 |
DOI | |
出版状态 | 已出版 - 1 7月 2014 |