Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals

Yihui He; Wanqi Jie; Yadong Xu; Yuecun Wang; Yan Zhou; Huimin Liu; Tao Wang; Gangqiang Zha

doi:10.1016/j.scriptamat.2014.03.007

Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals

Yihui He, Wanqi Jie, Yadong Xu, Yuecun Wang, Yan Zhou, Huimin Liu, Tao Wang, Gangqiang Zha

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe crystal have been investigated through the defect-selective etching and cathodoluminescence (CL). The enrichment of well-arranged dislocation-related defects was found around the Te inclusions. A dislocation-mediated defects interaction model was proposed and native deep-level defects were considered to be associated with induced dislocation motions, showing as a dark CL contrast. The spatial arrangement of the microstructural defects were confined to a stellated octahedron.

Original language	English
Pages (from-to)	17-20
Number of pages	4
Journal	Scripta Materialia
Volume	82
DOIs	https://doi.org/10.1016/j.scriptamat.2014.03.007
State	Published - 1 Jul 2014

Keywords

Cathodoluminescence (CL)
Compound semiconductors
Defects in semiconductors
Dislocation dynamics
Plastic deformation

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10.1016/j.scriptamat.2014.03.007

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title = "Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals",

abstract = "The dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe crystal have been investigated through the defect-selective etching and cathodoluminescence (CL). The enrichment of well-arranged dislocation-related defects was found around the Te inclusions. A dislocation-mediated defects interaction model was proposed and native deep-level defects were considered to be associated with induced dislocation motions, showing as a dark CL contrast. The spatial arrangement of the microstructural defects were confined to a stellated octahedron.",

keywords = "Cathodoluminescence (CL), Compound semiconductors, Defects in semiconductors, Dislocation dynamics, Plastic deformation",

author = "Yihui He and Wanqi Jie and Yadong Xu and Yuecun Wang and Yan Zhou and Huimin Liu and Tao Wang and Gangqiang Zha",

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doi = "10.1016/j.scriptamat.2014.03.007",

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T1 - Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals

AU - He, Yihui

AU - Jie, Wanqi

AU - Xu, Yadong

AU - Wang, Yuecun

AU - Zhou, Yan

AU - Liu, Huimin

AU - Wang, Tao

AU - Zha, Gangqiang

PY - 2014/7/1

Y1 - 2014/7/1

N2 - The dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe crystal have been investigated through the defect-selective etching and cathodoluminescence (CL). The enrichment of well-arranged dislocation-related defects was found around the Te inclusions. A dislocation-mediated defects interaction model was proposed and native deep-level defects were considered to be associated with induced dislocation motions, showing as a dark CL contrast. The spatial arrangement of the microstructural defects were confined to a stellated octahedron.

AB - The dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe crystal have been investigated through the defect-selective etching and cathodoluminescence (CL). The enrichment of well-arranged dislocation-related defects was found around the Te inclusions. A dislocation-mediated defects interaction model was proposed and native deep-level defects were considered to be associated with induced dislocation motions, showing as a dark CL contrast. The spatial arrangement of the microstructural defects were confined to a stellated octahedron.

KW - Cathodoluminescence (CL)

KW - Compound semiconductors

KW - Defects in semiconductors

KW - Dislocation dynamics

KW - Plastic deformation

UR - http://www.scopus.com/inward/record.url?scp=84899896662&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2014.03.007

DO - 10.1016/j.scriptamat.2014.03.007

M3 - 文章

AN - SCOPUS:84899896662

SN - 1359-6462

VL - 82

SP - 17

EP - 20

JO - Scripta Materialia

JF - Scripta Materialia

ER -

Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals

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Keywords

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