@inproceedings{76d463ece9234f01a01f009939400c2c,
title = "Design and fabrication of an in-plane SOI MEMS accelerometer with a high yield rate",
abstract = "This paper presents a SOI based capacitive accelerometer using a backside dry release process. In order to increase the yield rate of the backside dry release process, the deep reactive ion etching (DRIE) process was improved by using a grooved accompany sheet. Using this method, the yield rate of the accelerometer was improved to 64.2% from19.2%. Test results show that sensitivity of the accelerometer is 3.5V/g.",
keywords = "micro-Accelerometer, SOI, yield rate",
author = "Pengcheng Li and Xiaoying Li and Enfu Li and Qiang Shen and Honglong Chang",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015 ; Conference date: 07-04-2015 Through 11-04-2015",
year = "2015",
month = jul,
day = "1",
doi = "10.1109/NEMS.2015.7147480",
language = "英语",
series = "2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "511--514",
booktitle = "2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015",
}