Design and fabrication of an in-plane SOI MEMS accelerometer with a high yield rate

Pengcheng Li; Xiaoying Li; Enfu Li; Qiang Shen; Honglong Chang

doi:10.1109/NEMS.2015.7147480

Design and fabrication of an in-plane SOI MEMS accelerometer with a high yield rate

Pengcheng Li, Xiaoying Li, Enfu Li, Qiang Shen, Honglong Chang

School of Mechanical Engineering

Northwestern Polytechnical University Xian

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

This paper presents a SOI based capacitive accelerometer using a backside dry release process. In order to increase the yield rate of the backside dry release process, the deep reactive ion etching (DRIE) process was improved by using a grooved accompany sheet. Using this method, the yield rate of the accelerometer was improved to 64.2% from19.2%. Test results show that sensitivity of the accelerometer is 3.5V/g.

Original language	English
Title of host publication	2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	511-514
Number of pages	4
ISBN (Electronic)	9781467366953
DOIs	https://doi.org/10.1109/NEMS.2015.7147480
State	Published - 1 Jul 2015
Event	10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015 - Xi'an, China Duration: 7 Apr 2015 → 11 Apr 2015

Publication series

Name	2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015

Conference

Conference	10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015
Country/Territory	China
City	Xi'an
Period	7/04/15 → 11/04/15

Keywords

micro-Accelerometer
SOI
yield rate

Access to Document

10.1109/NEMS.2015.7147480

Cite this

Li, P., Li, X., Li, E., Shen, Q., & Chang, H. (2015). Design and fabrication of an in-plane SOI MEMS accelerometer with a high yield rate. In 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015 (pp. 511-514). Article 7147480 (2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEMS.2015.7147480

Li, Pengcheng ; Li, Xiaoying ; Li, Enfu et al. / Design and fabrication of an in-plane SOI MEMS accelerometer with a high yield rate. 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 511-514 (2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015).

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title = "Design and fabrication of an in-plane SOI MEMS accelerometer with a high yield rate",

abstract = "This paper presents a SOI based capacitive accelerometer using a backside dry release process. In order to increase the yield rate of the backside dry release process, the deep reactive ion etching (DRIE) process was improved by using a grooved accompany sheet. Using this method, the yield rate of the accelerometer was improved to 64.2% from19.2%. Test results show that sensitivity of the accelerometer is 3.5V/g.",

keywords = "micro-Accelerometer, SOI, yield rate",

author = "Pengcheng Li and Xiaoying Li and Enfu Li and Qiang Shen and Honglong Chang",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015 ; Conference date: 07-04-2015 Through 11-04-2015",

year = "2015",

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doi = "10.1109/NEMS.2015.7147480",

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series = "2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015",

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Li, P, Li, X, Li, E, Shen, Q & Chang, H 2015, Design and fabrication of an in-plane SOI MEMS accelerometer with a high yield rate. in 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015., 7147480, 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015, Institute of Electrical and Electronics Engineers Inc., pp. 511-514, 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015, Xi'an, China, 7/04/15. https://doi.org/10.1109/NEMS.2015.7147480

Design and fabrication of an in-plane SOI MEMS accelerometer with a high yield rate. / Li, Pengcheng; Li, Xiaoying; Li, Enfu et al.
2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 511-514 7147480 (2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Design and fabrication of an in-plane SOI MEMS accelerometer with a high yield rate

AU - Li, Pengcheng

AU - Li, Xiaoying

AU - Li, Enfu

AU - Shen, Qiang

AU - Chang, Honglong

PY - 2015/7/1

Y1 - 2015/7/1

N2 - This paper presents a SOI based capacitive accelerometer using a backside dry release process. In order to increase the yield rate of the backside dry release process, the deep reactive ion etching (DRIE) process was improved by using a grooved accompany sheet. Using this method, the yield rate of the accelerometer was improved to 64.2% from19.2%. Test results show that sensitivity of the accelerometer is 3.5V/g.

AB - This paper presents a SOI based capacitive accelerometer using a backside dry release process. In order to increase the yield rate of the backside dry release process, the deep reactive ion etching (DRIE) process was improved by using a grooved accompany sheet. Using this method, the yield rate of the accelerometer was improved to 64.2% from19.2%. Test results show that sensitivity of the accelerometer is 3.5V/g.

KW - micro-Accelerometer

KW - SOI

KW - yield rate

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DO - 10.1109/NEMS.2015.7147480

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BT - 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015

Y2 - 7 April 2015 through 11 April 2015

ER -

Li P, Li X, Li E, Shen Q, Chang H. Design and fabrication of an in-plane SOI MEMS accelerometer with a high yield rate. In 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 511-514. 7147480. (2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015). doi: 10.1109/NEMS.2015.7147480

Design and fabrication of an in-plane SOI MEMS accelerometer with a high yield rate

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