Demonstration of a 4H SiC betavoltaic nuclear battery based on schottky barrier diode

Da Yong Qiao; Wei Zheng Yuan; Peng Gao; Xian Wang Yao; Bo Zang; Lin Zhang; Hui Guo; Hong Jian Zhang

doi:10.1088/0256-307X/25/10/076

Demonstration of a 4H SiC betavoltaic nuclear battery based on schottky barrier diode

Da Yong Qiao, Wei Zheng Yuan, Peng Gao, Xian Wang Yao, Bo Zang, Lin Zhang, Hui Guo, Hong Jian Zhang

机电学院

科研成果: 期刊稿件 › 文章 › 同行评审

56 引用（Scopus）

摘要

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm² an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm² are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.

源语言	英语
页（从-至）	3798-3800
页数	3
期刊	Chinese Physics Letters
卷	25
期	10
DOI	https://doi.org/10.1088/0256-307X/25/10/076
出版状态	已出版 - 1 10月 2008

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abstract = "A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.",

author = "Qiao, {Da Yong} and Yuan, {Wei Zheng} and Peng Gao and Yao, {Xian Wang} and Bo Zang and Lin Zhang and Hui Guo and Zhang, {Hong Jian}",

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T1 - Demonstration of a 4H SiC betavoltaic nuclear battery based on schottky barrier diode

AU - Qiao, Da Yong

AU - Yuan, Wei Zheng

AU - Gao, Peng

AU - Yao, Xian Wang

AU - Zang, Bo

AU - Zhang, Lin

AU - Guo, Hui

AU - Zhang, Hong Jian

PY - 2008/10/1

Y1 - 2008/10/1

N2 - A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.

AB - A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.

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SN - 0256-307X

VL - 25

SP - 3798

EP - 3800

JO - Chinese Physics Letters

JF - Chinese Physics Letters

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Demonstration of a 4H SiC betavoltaic nuclear battery based on schottky barrier diode

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