Demonstration of a 4H SiC betavoltaic nuclear battery based on schottky barrier diode

Da Yong Qiao; Wei Zheng Yuan; Peng Gao; Xian Wang Yao; Bo Zang; Lin Zhang; Hui Guo; Hong Jian Zhang

doi:10.1088/0256-307X/25/10/076

Demonstration of a 4H SiC betavoltaic nuclear battery based on schottky barrier diode

Da Yong Qiao, Wei Zheng Yuan, Peng Gao, Xian Wang Yao, Bo Zang, Lin Zhang, Hui Guo, Hong Jian Zhang

School of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm² an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm² are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.

Original language	English
Pages (from-to)	3798-3800
Number of pages	3
Journal	Chinese Physics Letters
Volume	25
Issue number	10
DOIs	https://doi.org/10.1088/0256-307X/25/10/076
State	Published - 1 Oct 2008

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title = "Demonstration of a 4H SiC betavoltaic nuclear battery based on schottky barrier diode",

abstract = "A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.",

author = "Qiao, {Da Yong} and Yuan, {Wei Zheng} and Peng Gao and Yao, {Xian Wang} and Bo Zang and Lin Zhang and Hui Guo and Zhang, {Hong Jian}",

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T1 - Demonstration of a 4H SiC betavoltaic nuclear battery based on schottky barrier diode

AU - Qiao, Da Yong

AU - Yuan, Wei Zheng

AU - Gao, Peng

AU - Yao, Xian Wang

AU - Zang, Bo

AU - Zhang, Lin

AU - Guo, Hui

AU - Zhang, Hong Jian

PY - 2008/10/1

Y1 - 2008/10/1

N2 - A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.

AB - A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.

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SN - 0256-307X

VL - 25

SP - 3798

EP - 3800

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 10

ER -

Demonstration of a 4H SiC betavoltaic nuclear battery based on schottky barrier diode

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