TY - JOUR
T1 - Cracking mechanism of CdZnTe polycrystalline film deposited on TFT circuit board at high temperature by close-spaced sublimation method
AU - Li, Yiwei
AU - Zhang, Wenyu
AU - Cao, Kun
AU - Li, Yang
AU - Zha, Gangqiang
AU - Tan, Tingting
N1 - Publisher Copyright:
© 2021 Elsevier Ltd
PY - 2021/8/15
Y1 - 2021/8/15
N2 - In this paper, CdZnTe polycrystalline films are grown on TFT circuit boards and ITO/TFT substrates by using close-spaced sublimation (CSS) technique. The phase, morphology and structure of CZT polycrystalline film were characterized by XRD, SEM and EDS, and the cracking mechanism of CZT film deposited on TFT circuit board at high temperature was studied. The results show that the substrate temperature was too high during experiment, which released the stress between Al film and ITO film, produced small hills, and made the binding force of ITO and CZT film greater than that of ITO film and Mo/Al/Mo, resulting in CZT film falling off. The presence of SiNx on TFT circuit board can promote the rupture of CZT film.
AB - In this paper, CdZnTe polycrystalline films are grown on TFT circuit boards and ITO/TFT substrates by using close-spaced sublimation (CSS) technique. The phase, morphology and structure of CZT polycrystalline film were characterized by XRD, SEM and EDS, and the cracking mechanism of CZT film deposited on TFT circuit board at high temperature was studied. The results show that the substrate temperature was too high during experiment, which released the stress between Al film and ITO film, produced small hills, and made the binding force of ITO and CZT film greater than that of ITO film and Mo/Al/Mo, resulting in CZT film falling off. The presence of SiNx on TFT circuit board can promote the rupture of CZT film.
KW - CdZnTe polycrystalline Film
KW - Close-spaced sublimation
KW - Direct digital X-ray plate detector
KW - TFT circuit Board
UR - http://www.scopus.com/inward/record.url?scp=85104130636&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2021.105821
DO - 10.1016/j.mssp.2021.105821
M3 - 文章
AN - SCOPUS:85104130636
SN - 1369-8001
VL - 131
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 105821
ER -