Cracking mechanism of CdZnTe polycrystalline film deposited on TFT circuit board at high temperature by close-spaced sublimation method

Yiwei Li, Wenyu Zhang, Kun Cao, Yang Li, Gangqiang Zha, Tingting Tan

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this paper, CdZnTe polycrystalline films are grown on TFT circuit boards and ITO/TFT substrates by using close-spaced sublimation (CSS) technique. The phase, morphology and structure of CZT polycrystalline film were characterized by XRD, SEM and EDS, and the cracking mechanism of CZT film deposited on TFT circuit board at high temperature was studied. The results show that the substrate temperature was too high during experiment, which released the stress between Al film and ITO film, produced small hills, and made the binding force of ITO and CZT film greater than that of ITO film and Mo/Al/Mo, resulting in CZT film falling off. The presence of SiNx on TFT circuit board can promote the rupture of CZT film.

Original languageEnglish
Article number105821
JournalMaterials Science in Semiconductor Processing
Volume131
DOIs
StatePublished - 15 Aug 2021

Keywords

  • CdZnTe polycrystalline Film
  • Close-spaced sublimation
  • Direct digital X-ray plate detector
  • TFT circuit Board

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