Cracking mechanism of CdZnTe polycrystalline film deposited on TFT circuit board at high temperature by close-spaced sublimation method

Yiwei Li; Wenyu Zhang; Kun Cao; Yang Li; Gangqiang Zha; Tingting Tan

doi:10.1016/j.mssp.2021.105821

Cracking mechanism of CdZnTe polycrystalline film deposited on TFT circuit board at high temperature by close-spaced sublimation method

Yiwei Li, Wenyu Zhang, Kun Cao, Yang Li, Gangqiang Zha, Tingting Tan

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this paper, CdZnTe polycrystalline films are grown on TFT circuit boards and ITO/TFT substrates by using close-spaced sublimation (CSS) technique. The phase, morphology and structure of CZT polycrystalline film were characterized by XRD, SEM and EDS, and the cracking mechanism of CZT film deposited on TFT circuit board at high temperature was studied. The results show that the substrate temperature was too high during experiment, which released the stress between Al film and ITO film, produced small hills, and made the binding force of ITO and CZT film greater than that of ITO film and Mo/Al/Mo, resulting in CZT film falling off. The presence of SiNx on TFT circuit board can promote the rupture of CZT film.

Original language	English
Article number	105821
Journal	Materials Science in Semiconductor Processing
Volume	131
DOIs	https://doi.org/10.1016/j.mssp.2021.105821
State	Published - 15 Aug 2021

Keywords

CdZnTe polycrystalline Film
Close-spaced sublimation
Direct digital X-ray plate detector
TFT circuit Board

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10.1016/j.mssp.2021.105821

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title = "Cracking mechanism of CdZnTe polycrystalline film deposited on TFT circuit board at high temperature by close-spaced sublimation method",

abstract = "In this paper, CdZnTe polycrystalline films are grown on TFT circuit boards and ITO/TFT substrates by using close-spaced sublimation (CSS) technique. The phase, morphology and structure of CZT polycrystalline film were characterized by XRD, SEM and EDS, and the cracking mechanism of CZT film deposited on TFT circuit board at high temperature was studied. The results show that the substrate temperature was too high during experiment, which released the stress between Al film and ITO film, produced small hills, and made the binding force of ITO and CZT film greater than that of ITO film and Mo/Al/Mo, resulting in CZT film falling off. The presence of SiNx on TFT circuit board can promote the rupture of CZT film.",

keywords = "CdZnTe polycrystalline Film, Close-spaced sublimation, Direct digital X-ray plate detector, TFT circuit Board",

author = "Yiwei Li and Wenyu Zhang and Kun Cao and Yang Li and Gangqiang Zha and Tingting Tan",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier Ltd",

year = "2021",

month = aug,

day = "15",

doi = "10.1016/j.mssp.2021.105821",

language = "英语",

volume = "131",

journal = "Materials Science in Semiconductor Processing",

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publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Cracking mechanism of CdZnTe polycrystalline film deposited on TFT circuit board at high temperature by close-spaced sublimation method

AU - Li, Yiwei

AU - Zhang, Wenyu

AU - Cao, Kun

AU - Li, Yang

AU - Zha, Gangqiang

AU - Tan, Tingting

PY - 2021/8/15

Y1 - 2021/8/15

N2 - In this paper, CdZnTe polycrystalline films are grown on TFT circuit boards and ITO/TFT substrates by using close-spaced sublimation (CSS) technique. The phase, morphology and structure of CZT polycrystalline film were characterized by XRD, SEM and EDS, and the cracking mechanism of CZT film deposited on TFT circuit board at high temperature was studied. The results show that the substrate temperature was too high during experiment, which released the stress between Al film and ITO film, produced small hills, and made the binding force of ITO and CZT film greater than that of ITO film and Mo/Al/Mo, resulting in CZT film falling off. The presence of SiNx on TFT circuit board can promote the rupture of CZT film.

AB - In this paper, CdZnTe polycrystalline films are grown on TFT circuit boards and ITO/TFT substrates by using close-spaced sublimation (CSS) technique. The phase, morphology and structure of CZT polycrystalline film were characterized by XRD, SEM and EDS, and the cracking mechanism of CZT film deposited on TFT circuit board at high temperature was studied. The results show that the substrate temperature was too high during experiment, which released the stress between Al film and ITO film, produced small hills, and made the binding force of ITO and CZT film greater than that of ITO film and Mo/Al/Mo, resulting in CZT film falling off. The presence of SiNx on TFT circuit board can promote the rupture of CZT film.

KW - CdZnTe polycrystalline Film

KW - Close-spaced sublimation

KW - Direct digital X-ray plate detector

KW - TFT circuit Board

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U2 - 10.1016/j.mssp.2021.105821

DO - 10.1016/j.mssp.2021.105821

M3 - 文章

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SN - 1369-8001

VL - 131

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

M1 - 105821

ER -

Cracking mechanism of CdZnTe polycrystalline film deposited on TFT circuit board at high temperature by close-spaced sublimation method

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Keywords

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